Si7366DP Datasheet

Si7366DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)
0.0055 at VGS = 10 V
20
0.009 at VGS = 4.5 V
16
• Halogen-free available
• TrenchFET® Power MOSFET
• Qg Optimized
RoHS
COMPLIANT
APPLICATIONS
• Synchronous Rectifier for DC/DC
PowerPAK® SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
G
5
Bottom View
S
Ordering Information: Si7366DP-T1-E3 (Lead (Pb)-free)
Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
ID
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
10 s
20
17
4.1
5
3.2
Steady State
20
± 20
13
10
50
1.4
1.7
1.1
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
t ≤ 10 s
Steady State
Steady State
RthJA
Typical
20
53
3.4
Maximum
25
70
4.5
Unit
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. .
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
www.vishay.com
1
Si7366DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
V
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
RDS(on)
3.0
± 100
µA
30
A
VGS = 10 V, ID = 20 A
0.0045
0.0055
VGS = 4.5 V, ID = 16 A
0.0072
0.009
gfs
VDS = 6 V, ID = 20 A
48
VSD
IS = 4.5 A, VGS = 0 V
0.76
1.1
16
25
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
5.2
Gate Resistance
Rg
1.8
VDS = 10 V, VGS = 4.5 V, ID = 20 A
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
6
Ω
21
32
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
16
25
58
90
15
23
IF = 4.1 A, di/dt = 100 A/µs
40
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
VGS = 10 thru 4 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
40
30
20
TC = 125 °C
3V
10
10
25 °C
- 55 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
Si7366DP
Vishay Siliconix
25 °C, unless otherwise noted
0.015
3000
0.012
2400
0.009
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS
VGS = 4.5 V
0.006
VGS = 10 V
Ciss
1800
1200
Coss
Crss
600
0.003
0
0.000
0
10
20
30
40
0
50
4
8
20
Capacitance
1.6
6
VDS = 10 V
ID = 20 A
5
VGS = 10 V
ID = 20 A
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
16
VDS - Drain-to-Source Voltage (V)
I D - Drain Current (A)
On-Resistance vs. Drain Current
4
3
2
1.4
1.2
1.0
1
0
0
3
6
9
12
15
18
0.8
- 50
21
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.030
R DS(on) - On-Resistance (Ω)
60
TJ = 150 °C
10
TJ = 25 °C
1
0.00
25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
12
0.024
0.018
ID = 20 A
0.012
0.006
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
10
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3
Si7366DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
0.2
160
0.0
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited
by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
TC = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 53°C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72296
S-80440-Rev. C, 03-Mar-08
Si7366DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72296.
Document Number: 72296
S-80440-Rev. C, 03-Mar-08
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Revision: 02-Oct-12
1
Document Number: 91000