Datenblatt

Quartz Crystal
Units
Voltage
Controlled
Crystal Oscillators
32SMOVF
VCXO
HIGH FREQ.
1.25 to 170 MHz
WIDE FREQ. RANGE
(+3.3V FIXED MODELS) 3.2x2.5 mm
XTAL
Item
Specifications
32SMOVF*1
Frequency range
CLK OSC
0.024 gm (wt.)
32SMOVF
3.2±0.2
#5
#4
#1
#2
#3
1.6
0.8
VCXO
0.9±0.1
2.5±0.2
#6
0.6
#2
#3
#6
#5
#4
0.6
1.3
#1
0.6
TCXO
PIN
1
2
3
4
5
6
CONNECTION
Vcontrol
“ L”
OPEN or “H”
GND
Z
OUTPUT
N.C.
VDD
Z : high impedance
SOLDERING PATTERN
0.8
1.0
0.9
1.0
1.0
1.0
0.01 μF
~
0.1 μF
OCXO
0.26
2.32
0.26
OUTPUT WAVEFORM
CMOS
● CMOS OUTPUT
● WIDE FREQUENCY RANGE
● PACKAGE SIZE 3.2x2.5 mm
General part number
Actual size
3.2x2.5 mm
STANDARD SMD VCXO
STANDARD SPECIFICATIONS
32SMOVF
0.8
VDD = +3.3V
1.250 MHz to 62.000 MHz
62.000 MHz to 170.000 MHz
32SMOVF(3.3VB) : ±50 ppm over -20゜
C to +70゜
C
32SMOVF(3.3VC) : ±30 ppm over -20゜
C to +70゜
C
32SMOVF(3.3VD) : ±25 ppm over -20゜
C to +70゜
C
32SMOVF(3.3VE) : ±20 ppm over -20゜
C to +70゜
C
Frequency stability
32SMOVF(3.3VBW) : ±50 ppm over -40゜
C to +85゜
C
(over all conditions)
32SMOVF(3.3VCW) : ±30 ppm over -40゜
C to +85゜
C
32SMOVF(3.3VDW) : ±25 ppm over -40゜
C to +85゜
C
Vcon = 1/2 VDD
±120 ppm min. ( 1.250 MHz to 40.000 MHz)
Frequency pulling VDD = +3.3V
±90 ppm min. (VDD = +1.65V ±1.65V)
±110 ppm min. (40.000 MHz to 62.000 MHz)
range
Vcon = +1.65V ±1.65V
±2 ppm max. (VDD ±10%)
±2 ppm max. (VDD ±5%)
Frequency change vs. input voltage
C to +70゜
C (Standard)
-20゜
Operating temperature
C to +85゜
C (W = Option)
-40゜
Supply voltage (VDD)
+3.3V DC ±10%
Operating
Conditions
Control voltage (Vcon = Pin#1)
1/2 VDD ±1/2 VDD DC
+1.65V ±1.65V DC
VIH : 70% VDD min.
Stand-by control voltage
(Pin#2)
VIL : 30% VDD max.*2
Supply voltage
-0.3V to +5.0V DC
-0.5V to +5.0V DC
Absolute
Vcontrol voltage
-0.3V to VDD +0.3V DC
Max. Ratings
Storage temperature
C to +100゜
C
-40゜
25 mA max.
Input current (no load)
5 mA max. (VDD = +3.3V)
Stand-by current (Pin#2 = "L")
10 μA max.
Symmetry
45% to 55% at 1/2 VDD level
45% to 55% at 1/2 VDD level
Rise and fall times
6 ns max. (1.25 MHz to 40.000 MHz)
4 ns max. (62.000 MHz to 100.000 MHz)
(10% VDD to 90% VDD level) 5 ns max. (40.000 MHz to 62.000 MHz) 2.4 ns max. (100.000 MHz to 170.000 MHz)
Output
(-40゜
C to +85゜
C) "0" Level
VOL : 10% VDD max.
VOL : 10% VDD max.
"1" Level
VOH : 90% VDD min.
VOH : 90% VDD min.
Load
15 pF max. (CMOS)
15 pF max. (CMOS)
Start-up time
10 ms max.
Frequency linearity
10 % max.
Frequency slope
Positive
Modulation bandwidth (-3 dB)
15 kHz min. (25 kHz, Typical)
20 kHz min. (40 kHz, Typical)
-135 dBc / Hz, Typical at 1 kHz offset (40.000 MHz)
-125 dBc / Hz, Typical at 1 kHz offset (155.520 MHz)
SSB phase noise
-160 dBc / Hz, Typical at 10.000 MHz offset (40.000 MHz)
-158 dBc / Hz, Typical at 10.000 MHz offset (155.520 MHz)
(at VDD = +3.3V)
Disable delay time
200 ns max.
Enable delay time
2 ms max.
10MΩ min. (62.000 MHz to 100.000 MHz)
Vcon input impedance (Vcon-GND)
10 MΩ min.
5 MΩ min. (100.000 MHz to 170.000 MHz)
±5 ppm max. at +25゜
Aging
C ±3゜
C for first year
+250゜
C ±10゜
C for 10 seconds
Reflow condition
+170゜
C ±10゜
C for 1 to 2 minutes (preheating)
( * 1 ) F inal par t number to be as s i gned w i th pac k age ty pe, i nput v ol tage, fr equenc y s tabi l i ty, oper ati ng tem pe rat ure and f requency.
e. g. 32S M OVF ( 3.3VD ) 122.880 M H z
( * 2 ) I nt er nal c r ys tal os c i l l ati on to be hal ted ( Pi n#2= V IL ) .
PACKAGE DATA
TEST CIRCUIT
1.5 +
0
-0 .1
Metal
1.75±0.1
∅
2.0±0.1
D
Ceramic
Sealing
Seam
Terminal
Tungsten (metalized)
Terminal plating
RoHS
100
L
A
Base
4.0±0.1
32SMOVF
C
Lid
TAPE SPECIFICATIONS
Gold / Nickel
(surface) / (under)
Compliant (Pb-free)
M
B
J
MCF
Item
Package
F
A
B
C
D
F
J
L
M
Reel Dia.
Qty/Reel
3.5
2.8
8.0
3.5
4.0
1.0
0.25
1.4
180
1000pcs
2000pcs
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