Quartz Crystal Units Voltage Controlled Crystal Oscillators 32SMOVF VCXO HIGH FREQ. 1.25 to 170 MHz WIDE FREQ. RANGE (+3.3V FIXED MODELS) 3.2x2.5 mm XTAL Item Specifications 32SMOVF*1 Frequency range CLK OSC 0.024 gm (wt.) 32SMOVF 3.2±0.2 #5 #4 #1 #2 #3 1.6 0.8 VCXO 0.9±0.1 2.5±0.2 #6 0.6 #2 #3 #6 #5 #4 0.6 1.3 #1 0.6 TCXO PIN 1 2 3 4 5 6 CONNECTION Vcontrol “ L” OPEN or “H” GND Z OUTPUT N.C. VDD Z : high impedance SOLDERING PATTERN 0.8 1.0 0.9 1.0 1.0 1.0 0.01 μF ～ 0.1 μF OCXO 0.26 2.32 0.26 OUTPUT WAVEFORM CMOS ● CMOS OUTPUT ● WIDE FREQUENCY RANGE ● PACKAGE SIZE 3.2x2.5 mm General part number Actual size 3.2x2.5 mm STANDARD SMD VCXO STANDARD SPECIFICATIONS 32SMOVF 0.8 VDD = +3.3V 1.250 MHz to 62.000 MHz 62.000 MHz to 170.000 MHz 32SMOVF(3.3VB) : ±50 ppm over -20゜ C to +70゜ C 32SMOVF(3.3VC) : ±30 ppm over -20゜ C to +70゜ C 32SMOVF(3.3VD) : ±25 ppm over -20゜ C to +70゜ C 32SMOVF(3.3VE) : ±20 ppm over -20゜ C to +70゜ C Frequency stability 32SMOVF(3.3VBW) : ±50 ppm over -40゜ C to +85゜ C (over all conditions) 32SMOVF(3.3VCW) : ±30 ppm over -40゜ C to +85゜ C 32SMOVF(3.3VDW) : ±25 ppm over -40゜ C to +85゜ C Vcon = 1/2 VDD ±120 ppm min. ( 1.250 MHz to 40.000 MHz) Frequency pulling VDD = +3.3V ±90 ppm min. (VDD = +1.65V ±1.65V) ±110 ppm min. (40.000 MHz to 62.000 MHz) range Vcon = +1.65V ±1.65V ±2 ppm max. (VDD ±10%) ±2 ppm max. (VDD ±5%) Frequency change vs. input voltage C to +70゜ C (Standard) -20゜ Operating temperature C to +85゜ C (W = Option) -40゜ Supply voltage (VDD) +3.3V DC ±10% Operating Conditions Control voltage (Vcon = Pin#1) 1/2 VDD ±1/2 VDD DC +1.65V ±1.65V DC VIH : 70% VDD min. Stand-by control voltage (Pin#2) VIL : 30% VDD max.*2 Supply voltage -0.3V to +5.0V DC -0.5V to +5.0V DC Absolute Vcontrol voltage -0.3V to VDD +0.3V DC Max. Ratings Storage temperature C to +100゜ C -40゜ 25 mA max. Input current (no load) 5 mA max. (VDD = +3.3V) Stand-by current (Pin#2 = "L") 10 μA max. Symmetry 45% to 55% at 1/2 VDD level 45% to 55% at 1/2 VDD level Rise and fall times 6 ns max. (1.25 MHz to 40.000 MHz) 4 ns max. (62.000 MHz to 100.000 MHz) (10% VDD to 90% VDD level) 5 ns max. (40.000 MHz to 62.000 MHz) 2.4 ns max. (100.000 MHz to 170.000 MHz) Output (-40゜ C to +85゜ C) "0" Level VOL : 10% VDD max. VOL : 10% VDD max. "1" Level VOH : 90% VDD min. VOH : 90% VDD min. Load 15 pF max. (CMOS) 15 pF max. (CMOS) Start-up time 10 ms max. Frequency linearity 10 % max. Frequency slope Positive Modulation bandwidth (-3 dB) 15 kHz min. (25 kHz, Typical) 20 kHz min. (40 kHz, Typical) -135 dBc / Hz, Typical at 1 kHz offset (40.000 MHz) -125 dBc / Hz, Typical at 1 kHz offset (155.520 MHz) SSB phase noise -160 dBc / Hz, Typical at 10.000 MHz offset (40.000 MHz) -158 dBc / Hz, Typical at 10.000 MHz offset (155.520 MHz) (at VDD = +3.3V) Disable delay time 200 ns max. Enable delay time 2 ms max. 10MΩ min. (62.000 MHz to 100.000 MHz) Vcon input impedance (Vcon-GND) 10 MΩ min. 5 MΩ min. (100.000 MHz to 170.000 MHz) ±5 ppm max. at +25゜ Aging C ±3゜ C for first year +250゜ C ±10゜ C for 10 seconds Reflow condition +170゜ C ±10゜ C for 1 to 2 minutes (preheating) ( * 1 ) F inal par t number to be as s i gned w i th pac k age ty pe, i nput v ol tage, fr equenc y s tabi l i ty, oper ati ng tem pe rat ure and f requency. e. g. 32S M OVF ( 3.3VD ) 122.880 M H z ( * 2 ) I nt er nal c r ys tal os c i l l ati on to be hal ted ( Pi n#2= V IL ) . PACKAGE DATA TEST CIRCUIT 1.5 + 0 -0 .1 Metal 1.75±0.1 ∅ 2.0±0.1 D Ceramic Sealing Seam Terminal Tungsten (metalized) Terminal plating RoHS 100 L A Base 4.0±0.1 32SMOVF C Lid TAPE SPECIFICATIONS Gold / Nickel (surface) / (under) Compliant (Pb-free) M B J MCF Item Package F A B C D F J L M Reel Dia. Qty/Reel 3.5 2.8 8.0 3.5 4.0 1.0 0.25 1.4 180 1000pcs 2000pcs