Data Sheet

PMBTA42DS
NPN/NPN high-voltage double transistors
Rev. 02 — 27 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted
Device (SMD) plastic package.
1.2 Features
n High breakdown voltage
n Two electrically isolated transistors
n Small SMD plastic package
1.3 Applications
n Automotive:
u High- and low-side switches
u Voltage regulators
n Communication: Telecom line interface
n Consumer: CRT TV
n Computing: Monitors
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
open base
single pulse;
tp ≤ 1 ms
-
-
300
V
-
-
100
mA
-
-
200
mA
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter TR1
2
base TR2
3
collector TR2
4
emitter TR2
5
base TR1
6
collector TR1
Simplified outline
6
5
4
1
2
3
Symbol
6
5
4
TR1
TR2
1
2
3
006aaa677
3. Ordering information
Table 3.
Ordering information
Type number
PMBTA42DS
Package
Name
Description
Version
SC-74
plastic surface mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMBTA42DS
P4
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
300
V
VCEO
collector-emitter voltage
open base
-
300
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
290
mW
[2]
-
370
mW
[3]
-
450
mW
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
2 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[1]
-
420
mW
[2]
-
560
mW
[3]
-
700
mW
Per device
Ptot
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
431
K/W
[2]
-
-
338
K/W
[3]
-
-
278
K/W
-
-
105
K/W
[1]
-
-
298
K/W
[2]
-
-
223
K/W
[3]
-
-
179
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
3 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
ICBO
collector-base
cut-off current
VCB = 200 V; IE = 0 A
-
-
100
nA
IEBO
emitter-base
cut-off current
VEB = 6 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 1 mA
25
-
-
VCE = 10 V; IC = 10 mA
40
-
-
VCE = 10 V; IC = 30 mA
40
-
-
VCEsat
collector-emitter
IC = 20 mA; IB = 2 mA
saturation voltage
-
-
500
mV
VBEsat
base-emitter
IC = 20 mA; IB = 2 mA
saturation voltage
-
-
900
mV
Cre
feedback
capacitance
VCB = 20 V; IC = ic = 0 A;
f = 1 MHz
-
-
3
pF
fT
transition
frequency
VCE = 20 V; IC = 10 mA;
f = 100 MHz
50
-
-
MHz
006aaa688
200
IB (mA) = 30
27
24
21
18
15
12
IC
(mA)
150
mld391
300
hFE
(1)
200
9
6
100
(2)
3
100
(3)
50
0
10−1
0
0
2
4
6
8
10
VCE (V)
1
102
10
IC (mA)
Tamb = 25 °C
VCE = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1.
Collector current as a function of
collector-emitter voltage; typical values
Fig 2.
DC current gain as a function of collector
current; typical values
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
4 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
mld393
1000
VBE
(mV)
mld394
1000
VBEsat
(mV)
(1)
800
(1)
800
(2)
(2)
600
600
(3)
400
(3)
400
200
0
10−1
1
200
10−1
102
10
1
IC (mA)
VCE = 10 V
IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = 150 °C
Fig 3.
102
10
IC (mA)
Base-emitter voltage as a function of collector
current; typical values
Fig 4.
Base-emitter saturation voltage as a function
of collector current, typical values
mld395
103
VCEsat
(mV)
(1)
102
(2)
(3)
10
10−1
1
102
10
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5.
Collector-emitter saturation voltage as a function of collector current; typical values
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
5 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
8. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
Fig 6.
04-11-08
Package outline SOT457 (SC-74)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMBTA42DS
Package
SOT457
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 13.
[2]
T1: normal taping
[3]
T2: reverse taping
PMBTA42DS_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
6 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
10. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 7.
Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
1.40
msc423
4.30
Dimensions in mm
Fig 8.
Wave soldering footprint SOT457 (SC-74)
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
7 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMBTA42DS_2
20090827
Product data sheet
-
PMBTA42DS_1
Modifications:
PMBTA42DS_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 8 “Wave soldering footprint SOT457 (SC-74)”:updated
20060106
Product data sheet
PMBTA42DS_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
8 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMBTA42DS_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 27 August 2009
9 of 10
PMBTA42DS
NXP Semiconductors
NPN/NPN high-voltage double transistors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 August 2009
Document identifier: PMBTA42DS_2
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