datasheet

SKiiP 2414 GB12E4-4DUSL
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
V
System
SKiiP® 4
2-pack-integrated intelligent
Power System
VCC 1)
Operating DC link voltage
1030
Visol
DC, t = 1 s, each polarity
4300
V
It(RMS)
per AC terminal, rms, sinusoidal current
500
A
Imax (peak)
max. peak current of power section
3600
A
IFSM
Tj = 175 °C, tp = 10 ms, sin 180°
15885
A
I²t
Tj = 175 °C, tp = 10 ms, diode
1262
kA²s
fout
fundamental output frequency
(sinusoidal)
1
kHz
Tstg
storage temperature
-40 ... 85
°C
IGBT
VCES
IC
SKiiP 2414 GB12E4-4DUSL
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
3109
A
Ts = 70 °C
2528
A
ICnom
Tj 2)
junction temperature
2400
A
-40 ... 175
°C
Diode
Features
• Intelligent Power Module
• Integrated current and DC-link
measurement with solar function
• Integrated temperature measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Tjmax = 175°C
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL file no. E242581
Typical Applications*
Solar energy
VRRM
IF
Tj = 25 °C
Tj = 175 °C
1200
V
Ts = 25 °C
2369
A
Ts = 70 °C
1878
A
2400
A
-40 ... 175
°C
19.2 ... 28.8
V
IFnom
Tj
2)
junction temperature
Driver
Vs
power supply
ViH
input signal voltage (high)
Vs + 0.3
V
dv/dt
secondary to primary side
75
kV/µs
fsw
switching frequency
10
kHz
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.01
2.26
V
IGBT
VCE(sat)
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
VCE0
Footnote
rCE
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop is 150°C
Eon + Eoff
IC = 2400 A
at terminal
at terminal
IC = 2400 A
Tj = 150 °C
Tj = 150 °C
2.49
2.69
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
0.51
0.57
mΩ
0.79
mΩ
Tj = 150 °C
0.75
VCC = 600 V
936
mJ
VCC = 900 V
1680
mJ
Rth(j-s)
per IGBT switch
0.0159
K/W
Rth(j-r)
per IGBT switch
0.0092
K/W
S44
© by SEMIKRON
Rev. 1.0 – 29.06.2015
1
SKiiP 2414 GB12E4-4DUSL
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.33
2.65
V
Tj = 150 °C
2.35
2.66
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
0.43
0.48
mΩ
Tj = 150 °C
0.61
0.65
mΩ
VR = 600 V
159
mJ
VR = 900 V
200
mJ
Diode
VF = VEC
IF = 2400 A
at terminal
VF0
rF
SKiiP® 4
Err
2-pack-integrated intelligent
Power System
SKiiP 2414 GB12E4-4DUSL
• Intelligent Power Module
• Integrated current and DC-link
measurement with solar function
• Integrated temperature measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Tjmax = 175°C
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL file no. E242581
Typical Applications*
Solar energy
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop is 150°C
IF = 2400 A
Tj = 150 °C
Rth(j-s)
per diode switch
0.0281
K/W
Rth(j-r)
per diode switch
0.02
K/W
Driver
Vs
supply voltage non stabilized
IS0
VIT+
bias current @Vs= 24V, fsw = 0, IAC = 0
k1 = 33 mA/kHz, k2 = 0.258 mA/A,
fout =50Hz, sinusoidal current
input threshold voltage (HIGH)
VIT-
input threshold voltage (LOW)
RIN
input resistance
CIN
input capacitance
tpRESET
error memory reset time
Is
Features
at terminal
19.2
24
28.8
360
= 360
V
mA
+ k1* fsw
+ k2 * IAC
0,7*Vs
mA
V
0,3*Vs
13
V
kΩ
1
nF
1300
2900
tpReset(OCP) Over current reset time
ms
µs
tTD
top / bottom switch interlock time
tjitter
jitter clock time
52
tSIS
short pulse suppression time
0.6
µs
tPOR
Power-On-Reset completed
3.5
s
Idigiout
digital output sink current
(HALT-signal)
Vit+ HALT
input threshold voltage HIGH HALT
(Low -->High)
Vit-HALT
input threshold voltage LOW HALT
(High --> Low)
td(err)
Error delay time (from detection to
HALT), (depends on kind of error)
ITRIPSC
over current trip level
ILL
threshold current value (solar function)
360
Ttrip
over temperature trip level
TDriverTrip
3
µs
58
16
0,6*Vs
ns
mA
V
0.4*Vs
V
170
µs
3600
3675
APEAK
128
135
142
°C
over temperature PCB trip level
113
120
124
°C
VDCtrip
over voltage trip level, can be
deactivated via CAN interface, ILoad >
ILL
910
930
950
V
VDCtripLL
over voltage trip level, ILoad < ILL
1005
1030
1055
V
1.8
3525
APEAK
S44
2
Rev. 1.0 – 29.06.2015
© by SEMIKRON
SKiiP 2414 GB12E4-4DUSL
Characteristics
Symbol
Conditions
System
µs
9
kV/µs
IC = 2400 A
3
kV/µs
3
kV/µs
RCC'+EE'
IC = 2400 A
flow rate = 550 m³/h, Ta=25°C,
500m above sea level
terminals to chip, Ts = 25 °C
LCE
commutation inductance
CCHC
coupling capacitance secondary to
heat sink
Cps
coupling capacitance primary to
secondary
ICES + IRD
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Mdc
DC terminals
6
Mac
AC terminals
13
w
SKiiP System w/o heat sink
3.22
kg
wh
heat sink
7.55
kg
dVCE/dtoff
SKiiP 2414 GB12E4-4DUSL
Features
• Intelligent Power Module
• Integrated current and DC-link
measurement with solar function
• Integrated temperature measurement
• Solder free power section
• IGBT4 and CAL4F technology
• Tjmax = 175°C
• Safety isolated switching and sensor
signals
• Digital signal transmission
• CAN Interface
• 100% tested IPM
• RoHS compliant
• UL file no. E242581
Unit
3.8
dVCE/dton
2-pack-integrated intelligent
Power System
max.
µs
td(off)IO
SKiiP 4
turn on
propagation delay
time
turn off
propagation delay
time
IC = 0 A
typ.
2.8
td(on)IO
®
min.
Rth(s-a)
VCC = 600 V
IC = 2400 A
Tj = 25 °C
Tj = 25 °C
VCC = 600 V
0.0225
K/W
0.0675
mΩ
4.5
nH
6
nF
0.08
nF
0.209
mA
8
Nm
15
Nm
Typical Applications*
Solar energy
Remarks
For further information please refer to
SKiiP®4 Technical Explanation
Footnote
1)
With assembly of suitable MKP capacitor
per terminal
2)
The specified maximum operation junction
temperature Tvjop is 150°C
S44
© by SEMIKRON
Rev. 1.0 – 29.06.2015
3
SKiiP 2414 GB12E4-4DUSL
4
Rev. 1.0 – 29.06.2015
© by SEMIKRON
SKiiP 2414 GB12E4-4DUSL
Fig. 1: Typical IGBT output characteristics
Fig. 2: Typical diode output characteristics
Fig. 3: Typical switching energy E = f(Ic)
Fig. 4: Typical switching energy E = f(Ic)
Fig. 5: Transient thermal impedance Zth(j-s)
Fig. 6: Transient thermal impedance Zth(j-r)
© by SEMIKRON
Rev. 1.0 – 29.06.2015
5
SKiiP 2414 GB12E4-4DUSL
Fig. 7: Transient thermal impedance Zth(s-a)
Fig. 8: Coefficients of thermal impedances
Fig. 9: Thermal resistance Rth(s-a) versus flow rate V
Fig. 10: Pressure drop Δp versus flow rate V
6
Rev. 1.0 – 29.06.2015
© by SEMIKRON
SKiiP 2414 GB12E4-4DUSL
System
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 29.06.2015
7
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