SUM47N10-24L Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 47 0.027 at VGS = 4.5 V 44 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested RoHS COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM47N10-24L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID 27 70 Continuous Source Current (Diode Conduction) IS 47 Single Pulse Avalanche Current IAS 40 EAS 80 Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range PD V 47 IDM Pulsed Drain Current Unit 136 A mJ b 3.75a W TJ, Tstg - 55 to 175 °C Symbol Maximum Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mount Free Air RthJA RthJC 40 62.5 °C/W 1.1 Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 72827 S-80272-Rev. C, 11-Feb-08 www.vishay.com 1 SUM47N10-24L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Test Conditions Min. Max. V(BR)DSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 3.0 VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Forward Transconductanceb rDS(on) µA A 0.019 0.024 VGS = 10 V, ID = 40 A, TJ = 125 °C 0.048 VGS = 10 V, ID = 40 A, TJ = 175 °C 0.060 VGS = 4.5 V, ID = 20 A 0.021 VDS = 15 V, ID = 40 A 70 gfs nA 250 70 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb V Ω 0.027 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 120 40 VDS = 50 V, VGS = 10 V, ID = 40 A f = 1 MHz td(on) Rise Timec tr c td(off) Fall Timec 60 nC 11 9 Rg Turn-On Delay Timec pF 290 Qgd Gate Resistance Turn-Off Delay Time 2400 VGS = 0 V, VDS = 25 V, F = 1 MHz VDD = 50 V, RL = 1.25 Ω ID ≅ 47 A, VGEN = 10 V, Rg = 2.5 Ω tf 1 2.2 3.5 8 13 40 60 15 25 80 120 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °C ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 70 A VSD IF = 40 A, VGS = 0 V 1.0 1.5 V trr IF = 47 A, di/dt = 100 A/µs 75 120 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72827 S-80272-Rev. C, 11-Feb-08 SUM47N10-24L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 160 100 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 120 80 4V 60 TC = 125 °C 40 - 55 °C 25 °C 40 20 3V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 100 g fs - Transconductance (S) r DS(on) - On-Resistance (Ω) TC = - 55 °C 80 25 °C 60 125 °C 40 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 20 0.00 0 0 10 20 30 40 50 0 60 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 20 VGS - Gate-to-Source Voltage (V) 4000 3000 C - Capacitance (pF) 0.04 Ciss 2000 1000 Crss Coss 0 VDS = 50 V ID = 40 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72827 S-80272-Rev. C, 11-Feb-08 100 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM47N10-24L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 40 A I S - Source Current (A) 2.0 (Normalized) rDS(on) - On-Resistance 2.5 1.5 1.0 TJ = 175 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 1 175 0.3 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 50 10 µs Limited by rDS(on)* 100 µs I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 1 ms 10 ms 100 ms, DC 1 TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Maximum Avalanche Drain Current vs. Case Temperature 175 0.1 0.1 * VGS 1 10 1000 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72827. www.vishay.com 4 Document Number: 72827 S-80272-Rev. C, 11-Feb-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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