SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET® Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • DC/DC Converters • Synchronous Rectifiers TO-252 D Drain Connected to Tab G D G S Top View S Ordering Information: SUD50N03-09P SUD50N03-09P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta TC = 100 °C Pulsed Drain Current a Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V 63b ID 44.5b IDM 50 IS 5 IAS 35 EAS 61 A mJ 65.2 PD W 7.5a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 16 20 40 50 1.8 2.3 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71856 S-80793-Rev. G, 14-Apr-08 www.vishay.com 1 SUD50N03-09P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol Test Conditions Min. V(BR)DSS VGS(th) IGSS 30 1.0 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Typ.a Max. 3.0 ± 100 1 50 50 Unit V nA µA A 0.0076 0.0115 0.0095 0.015 0.014 20 Ω S VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID = 50 A 0.5 Turn-On Delay Timec VDD = 15 V, RL = 0.3 Ω Rise Timec ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic TC = 25 °C ISM Pulsed Current VSD IF = 50 A, VGS = 0 V Diode Forward Voltageb trr IF = 50 A, di/dt = 100 A/µs Source-Drain Reverse Recovery Time 2200 410 180 11 7.5 5.0 1.5 9 15 22 8 2.1 15 25 35 12 1.2 35 100 1.5 70 pF 16 nC Ω ns A V ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 120 VGS = 10 thru 6 V 90 I D - Drain Current (A) I D - Drain Current (A) 5V 4V 60 30 90 60 TC = 125 °C 30 3V 25 °C - 55 °C 2V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 6 Transfer Characteristics Document Number: 71856 S-80793-Rev. G, 14-Apr-08 SUD50N03-09P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 TC = - 55 °C 25 °C 60 0.04 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 125 °C 40 20 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0.00 0 0 10 20 30 40 0 50 20 40 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 VGS - Gate-to-Source Voltage (V) 10 Ciss 2500 C - Capacitance (pF) 60 2000 1500 1000 Coss Crss 500 0 VDS = 15 V ID = 30 A 8 6 4 2 0 0 5 10 15 20 25 30 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 2.0 30 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.6 1.2 0.8 TJ = 150 °C TJ = 25 °C 10 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: 71856 S-80793-Rev. G, 14-Apr-08 1.5 www.vishay.com 3 SUD50N03-09P Vishay Siliconix THERMAL RATINGS 1000 25 Limited by R DS(on)* 10, 100 µs 100 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 10 1 ms 10 ms 100 ms 1 TA = 25 °C Single Pulse 0.1 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified TA - Ambient Temperature (°C) * VGS Maximum Drain Current vs. Ambient Temperature 1s 10 s 100 s DC Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71856. www.vishay.com 4 Document Number: 71856 S-80793-Rev. G, 14-Apr-08 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000