SUD50N02-06P Datasheet

SUD50N02-06P
Vishay Siliconix
N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
a
RDS(on) (Ω)
20
ID (A)
0.0060 at VGS = 10 V
26
0.0095 at VGS = 4.5 V
21
•
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized for High Efficiency
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck DC/DC Conversion
- Desktop
- Server
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Currenta
TC = 25 °C
50b
100
Continuous Source Current (Diode Conduction)
IS
26
Avalanche Current
IAS
45
EAS
101
a
Single Pulse Avalanche Energy
Maximum Power Dissipation
L = 0.1 mH
TA = 25 °C
TC = 25 °C
6.8
PD
A
mJ
a
W
65
TJ, Tstg
Operating Junction and Storage Temperature Range
V
26a
ID
IDM
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Symbol
t ≤ 10 s
Steady State
RthJA
RthJC
Typical
Maximum
18
22
40
50
1.9
2.3
Unit
°C/W
Notes:
a. Surface mounted on FR4 board, t ≤ 10 s.
b. Limited by package.
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
20
0.8
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Drain-Source On-State Resistanceb
rDS(on)
Forward Transconductanceb
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Typ.a
Max.
Unit
V
3
± 100
1
50
nA
µA
50
A
0.0046
0.0073
0.006
0.0084
0.0095
Ω
15
S
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
0.5
Turn-On Delay Timec
VDD = 10 V, RL = 0.2 Ω
Rise Timec
c
≅
50
A, VGEN = 10 V, RG = 2.5 Ω
I
Turn-Off Delay Time
D
c
Fall Time
Source-Drain Diode Ratings and Characteristic (TC = 25 °C)
ISM
Pulsed Current
b
V
IF = 50 A, VGS = 0 V
Diode Forward Voltage
SD
IF = 50 A, dI/dt = 100 A/µs
trr
Source-Drain Reverse Recovery Time
2550
900
415
19
7.5
6
1.5
11
10
24
9
2.4
20
15
35
15
1.2
35
100
1.5
70
pF
30
nC
Ω
ns
A
V
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
160
140
VGS = 10 thru 5 V
80
I D - Drain Current (A)
I D - Drain Current (A)
120
4V
100
80
60
60
40
TC = 125 °C
3V
40
20
25 °C
20
2V
- 55 °C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
10
0
0.0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
4.0
4.5
Transfer Characteristics
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
0.010
0.008
25 °C
VGS = 4.5 V
125 °C
60
0.006
40
VGS = 6.3 V
0.004
R DS(on)
gfs - Transconductance (S)
TC = - 55 °C
80
20
0
VGS = 10 V
0.002
0.000
0
10
20
30
40
50
0
20
40
ID - Drain Current (A)
Transconductance
80
100
On-Resistance vs. Drain Current
3500
10
VGS - Gate-to-Source Voltage (V )
3000
Ciss
C - Capacitance (pF)
60
ID - Drain Current (A)
2500
2000
1500
Coss
1000
Crss
VDS = 10 V
ID = 50 A
8
6
4
2
500
0
0
0
4
8
12
16
0
20
16
24
32
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
1.6
40
100
VGS = 10 V
ID = 30 A
1.4
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
8
1.2
1.0
TJ = 150 °C
TJ = 25 °C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
175
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
Source-Drain Diode Forward Voltage
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
THERMAL RATINGS
1000
40
Limited
by RDS(on)*
100
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
8
10, 100 µs
1 ms
10
10 ms
100 ms
1
TA = 25 °C
Single Pulse
0.1
0
0
25
50
75
100
125
150
175
0.01
0.1
TA - Ambient Temperature (°C)
1s
10 s
100 s, DC
1
10
100
VDS - Drain-to-Source Voltage (V)
>
* VGS minimum V GS at which RDS(on) is specified
Maximum Drain Current
vs. Ambient Temperature
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71931.
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Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
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Document Number: 91000