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Analog Power
AM4530C
P & N-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
82 @ VGS = 4.5V
50 @ VGS = 10V
80 @ VGS = -4.5V
52 @ VGS = -10V
30
-30
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
4.2
5.3
-4.2
-5.2
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channel Units
Parameter
30
-30
Drain-Source Voltage
VDS
V
VGS
±20
±20
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
5.3
-5.2
4.2
-4.1
IDM
20
-20
IS
1.3
-1.3
2.1
2.1
1.3
1.3
ID
o
TA=25 C
a
Power Dissipation
o
TA=70 C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Steady-State
A
W
o
-55 to 150
Symbol
t <= 10 sec
A
RθJA
Maximum
C
Units
62.5
o
110
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Min Typ
Max Unit
Test Conditions
Ch
VGS = VDS, ID = 250 uA
N
1.2
1.7
2.5
VGS = VDS, ID = -250 uA
VGS = -20 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 5.3 A
VGS = 4.5 V, ID = 4.2 A
VGS = -10 V, ID = -5.2 A
VGS = -4.5 V, ID = -42 A
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
P
P
N
P
N
N
P
-1.2
-2.5
±100
±100
-1
1
N
P
-1.8
±80
±80
-0.8
0.8
24
-24
43
70
45
72
0.75
-0.88
N
P
N
P
N
2.2
10
0.5
2.2
0.8
5
20
1
5
2
P
N
P
N
P
N
P
N
P
1.7
8
10
5
2.8
23
53.6
3
46
4
16
20
10
6
46
108
6
92
Static
VGS(th)
Gate-Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
A
ID(on)
A
Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
rDS(on)
VSD
N
P
20
-20
V
nA
uA
A
50
82
52
80
mΩ
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
td(off)
tf
N-Channel
VDS=15V, VGS=10V, ID=5.3A
P-Channel
VDS=-15V, VGS=-10V, ID=-5.2A
N-Chaneel
VDD=15V, VGS=10V, ID=1A ,
RGEN=6Ω,
P-Channel
VDD=-15V, VGS=-10V, ID=-1A
RGEN=6Ω
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
Typical Electrical Characteristics (N-Channel)
30
40
30
5.0V
20
4.0V
10
3.0V
2
3
4
125oC
20
15
10
5
0
1
25oC
25
ID, DRAIN CURRENT (A)
I D , D R A IN C U R R E N T ( A
6.0V
0
TA = -55oC
VDS = 5V
VGS = 10V
0
5
0.5
1.5
2.5
3.5
4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
R D S ( O N ) , N O R M A L IZ E D
D R A IN - S O U R C E O N - R E S IS T A N C
3
700
VGS =
f = 1MHz
VGS = 0 V
600
C A P A C IT A N C E ( p F
2.5
2
4.5V
1.5
CISS
500
400
300
200
10V
1
COSS
100
CRSS
0
0.5
0
5
10
15
20
25
0
30
5
10
Figure 3. On Resistance Vs Vgs Voltage
1.6
ID = 5.3A
15V
25
30
VGS = 10V
ID = 7A
1.4
Normalized RDS(on)
Vgs Voltage ( V )
20
Figure 4. Capacitance Characteristics
10
8
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
6
4
2
1.2
1.0
0.8
0
0
1
2
3
4
0.6
5
-50
Qg, Gate Charge (nC)
0
25
50
75
100
125
150
TJ Juncation Temperature (ºC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
Typical Electrical Characteristics (N-Channel)
0.1
ID = 5.3A
VGS = 0V
10
0.08
RDS(ON), ON-RESISTANCE(OHM)
IS, REVERSE DRAIN CURRENT (A)
100
o
1
TA = 125 C
o
25 C
0.1
0.01
0.06
0.04
TA = 25oC
0.02
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
2
1.4
4
6
8
10
V GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
50
VDS = VGS
ID = 250mA
2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
2.2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100
125
150
175
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
40
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (SEC)
10
o
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
Rq J A (t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.0
P(p k)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4530_I
100
Analog Power
AM4530C
Typical Electrical Characteristics (P-Channel)
30
15
-6.0V
o
VDS = -5V
-5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -10V
20
-4.0V
10
o
TA = -55 C
25 C
12
o
125 C
9
6
3
-3.0V
0
0
0
1
2
3
4
5
1
6
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3
3.5
4
4.5
with Source Current and Temperature
800
2
f = 1 MHz
VGS = 0 V
700
1.8
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
Figure 2. Body Diode Forward Voltage Variation
Figure 1. On-Region Characteristics
1.6
-4.5V
1.4
1.2
-10V
1
CISS
600
500
400
300
COSS
200
100
0.8
0
6
12
18
24
CRSS
0
30
0
5
-ID, DRAIN CURRENT (A)
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
1.6
ID = -5.7A
8
-15V
Normalized RDS(on)
-VGS, GATE-SOURCE VOLTAGE (V)
2
-VGS, GATE TO SOURCE VOLTAGE (V)
6
4
2
VGS = -10V
ID = -5.7A
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
8
-50
10
0
25
50
75
100
125
150
o
T J Juncation T emperature ( C)
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
5
PRELIMINARY
-25
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
0.25
100
ID = -5.7A
VGS =0V
10
RDS(ON), ON-RESISTANCE (OHM)
-IS, REVERSE DRAIN CURRENT (A)
Typical Electrical Characteristics (P-Channel)
o
TA = 125 C
1
0.1
o
25 C
0.01
0.001
0.0001
0
0.2
0.15
0.1
0.05
TA = 25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
50
VDS = VGS
ID = -250mA
2
P(pk), PEAK TRANSIENT POWER
(W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
2.2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125 150 175
SINGLE PULSE
RθJA = 125oC/W
40
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D =0.5
0.2
Rq J A(t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.1
0.05
P (pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
6
PRELIMINARY
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
Package Information
SO-8: 8LEAD
H x 45°
7
PRELIMINARY
Publication Order Number:
DS-AM4530_I
Analog Power
AM4530C
Ordering information
• AM4530C-T1-XX
–
–
–
–
–
–
A:
M:
4530:
C:
T1:
XX:
Analog Power
MOSFET
Part number
Complementary
Tape & reel
Blank:
Standard
PF:
Leadfree
8
PRELIMINARY
Publication Order Number:
DS-AM4530_I