Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS5520X
20 V, 5 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2004 Jun 23
2004 Nov 08
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
FEATURES
QUICK REFERENCE DATA
• High hFE and low VCEsat at high current operation
SYMBOL
• High collector current IC: 5 A
VCEO
collector-emitter voltage
−20
V
IC
collector current (DC)
−5
A
ICM
peak collector current
−10
A
RCEsat
equivalent on-resistance
54
mΩ
• High efficiency leading to less heat generation.
APPLICATIONS
PARAMETER
MAX.
UNIT
• Medium power peripheral drivers (e.g. fans and motors)
PINNING
• Strobe flash units for digital still cameras and mobile
phones
PIN
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers
DESCRIPTION
1
emitter
2
collector
3
base
• Supply line switching.
DESCRIPTION
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62)
plastic package.
NPN complement: PBSS4520X.
2
3
MARKING
TYPE NUMBER
1
MARKING CODE(1)
PBSS5520X
3
*1K
2
1
sym079
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5520X
2004 Nov 08
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−20
V
VCEO
collector-emitter voltage
open base
−
−20
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−5
A
ICM
peak collector current
tp ≤ 1 ms
−
−10
A
ICRP
repetitive peak collector current
notes 1 and 2
−
−6.5
A
IB
base current (DC)
−
−1
A
IBM
peak base current
tp ≤ 1 ms
−
−2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
notes 1 and 2
−
2.5
W
note 2
−
0.55
W
note 3
−
1
W
note 4
−
1.4
W
note 5
−
1.6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
2004 Nov 08
3
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
001aaa229
1600
Ptot
(mW)
PBSS5520X
(1)
1200
(2)
800
(3)
400
0
−50
0
50
100
150
200
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 08
4
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
Rth(j-s)
VALUE
UNIT
notes 1 and 2
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
16
K/W
in free air
thermal resistance from junction to soldering point
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
006aaa232
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
5
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
006aaa233
103
Zth
(K/W)
(1)
102
(2)
(3)
(5)
(4)
(6)
10
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
6
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −20 V; IE = 0 A
−
−
−100
nA
VCB = −20 V; IE = 0 A; Tj = 150 °C
−
−
−50
μA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−100
nA
ICES
collector-emitter cut-off current
VCE = −20 V; VBE = 0 V
−
−
−100
nA
hFE
DC current gain
VCE = −2 V
IC = −0.5 A; note 1
300
430
−
IC = −1 A; note 1
275
400
−
IC = −2 A; note 1
250
360
−
IC = −5 A; note 1
150
260
−
collector-emitter saturation voltage IC = −0.5 A; IB = −5 mA
−
−45
−70
mV
IC = −1 A; IB = −10 mA
−
−70
−110
mV
IC = −2.5 A; IB = −125 mA; note 1
−
−100
−150
mV
IC = −4 A; IB = −200 mA; note 1
−
−150
−230
mV
VCEsat
IC = −5 A; IB = −500 mA; note 1
−
−170
−270
mV
RCEsat
equivalent on-resistance
IC = −5 A; IB = −500 mA; note 1
−
34
54
mΩ
VBEsat
base-emitter saturation voltage
IC = −4 A; IB = −200 mA; note 1
−
−0.9
−1.05
V
IC = −5 A; IB = −500 mA; note 1
−
−0.96
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −2 A
−
−0.74
−0.85
V
fT
transition frequency
IC = −100 mA; VCE = −10 V;
f = 100 MHz
80
100
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
−
130
150
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 08
7
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
001aaa772
−0.25
IC
(A)
−0.20
(1)
(2)
(3)
(4)
001aaa773
−1200
VBE
(mV)
(5)
−800
−0.15
(1)
(6)
(7)
(8)
−0.10
(2)
(9)
−400
(3)
(10)
−0.05
0
−0.4
0
(1)
(2)
(3)
(4)
IB = −64 mA.
IB = −57.6 mA.
IB = −51.2 mA.
IB = −44.8 mA.
Fig.6
−0.8
−1.2
(5) IB = −38.4 mA.
(6) IB = −32 mA.
(7) IB = −25.6 mA.
0
−10−1
−1.6
−2.0
VCE (V)
(8) IB = −19.2 mA.
(9) IB = −12.8 mA.
(10) IB = −6.4 mA.
−10
−102
−103
−104
IC (mA)
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Collector current as a function of
collector-emitter voltage; typical values.
001aaa774
1000
−1
hFE
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
102
001aaa775
RCEsat
(Ω)
800
10
(1)
600
1
(2)
400
10−1
(3)
(1)
(2)
200
(3)
0
−10−1
−1
−10
−102
10−2
−10−1
−103
−104
IC (mA)
−1
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
DC current gain as a function of collector
current; typical values.
2004 Nov 08
8
−10
−102
−103
−104
IC (mA)
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
001aaa776
−103
001aaa777
−103
VCEsat
(mV)
VCEsat
(mV)
−102
−102
(1)
(1)
(2)
(2)
(3)
−10
−1
−10−1
(3)
−10
−1
−10
−102
−1
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
001aaa778
−1200
VBEsat
(mV)
−800
001aaa779
−1200
VBEon
(mV)
−800
(1)
(2)
−400
0
−10−1
(3)
−1
−400
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C; VCE = −2 V.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
9
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
Reference mounting conditions
32 mm
handbook, halfpage
32 mm
10 mm
40
mm
2.5 mm
40 mm
1 mm
10 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
MLE322
001aaa234
Fig.15 FR4, mounting pad for collector 1 cm2.
Fig.14 FR4, standard footprint.
32 mm
30 mm
20
mm
40
mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 08
10
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 08
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
11
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 08
12
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp13
Date of release: 2004 Nov 08
Document order number: 9397 750 13892
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