Data Sheet

DF
N1
01
0D
-3
PBSS4130QA
30 V, 1 A NPN low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5130QA.
2. Features and benefits
•
•
•
•
•
•
•
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
30
V
IC
collector current
-
-
1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
1.5
A
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
-
175
235
mΩ
δ ≤ 0.02 ; Tamb = 25 °C
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PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
B
base
2
E
emitter
3
C
collector
4
C
collector
Simplified outline
Graphic symbol
C
1
B
4
3
E
sym123
2
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PBSS4130QA
Name
Description
Version
DFN1010D-3
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals
SOT1215
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4130QA
01 00 10
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1.
aaa-008041
DFN1010D-3 (SOT1215) binary marking code description
PBSS4130QA
Product data sheet
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30 V, 1 A NPN low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
30
V
VCEO
collector-emitter voltage
open base
-
30
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
1
A
ICM
peak collector current
-
1.5
A
IB
base current
-
0.3
A
IBM
peak base current
single pulse; tp ≤ 1 ms
-
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
325
mW
[2]
-
600
mW
[3]
-
740
mW
[4]
-
540
mW
[5]
-
1000
mW
single pulse; tp ≤ 1 ms
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4]
[5]
PBSS4130QA
Product data sheet
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm .
2
2
Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm .
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PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007844
1.25
Ptot
(W)
1.00 (1)
0.75 (2)
(3)
0.50
(4)
(5)
0.25
0
-75
-25
(1) FR4 PCB, 4-layer copper, 1 cm
25
75
125
175
Tamb (°C)
2
(2) FR4 PCB, single-sided copper, 6 cm
2
2
(3) FR4 PCB, single-sided copper, 1 cm
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig. 2.
Power derating curves
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Product data sheet
in free air
Min
Typ
Max
Unit
[1]
-
-
385
K/W
[2]
-
-
209
K/W
[3]
-
-
169
K/W
[4]
-
-
232
K/W
[5]
-
-
125
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4]
[5]
PBSS4130QA
Conditions
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm .
2
2
Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm .
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PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007845
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007846
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.5
0.2
0.1
0.05
10
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, single-sided copper, 1 cm
Fig. 4.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4130QA
Product data sheet
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NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007847
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.33
0.5
0.2
0.1
10
0.05
0.02
0.01
1
10-5
0
10-4
10-3
10-2
FR4 PCB, single-sided copper, 6 cm
Fig. 5.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
1
10-5
0.01
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, 4-layer copper, standard footprint
Fig. 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4130QA
Product data sheet
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PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007849
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
1
10-5
0.01
0
10-4
10-3
FR4 PCB, 4-layer copper, 1 cm
Fig. 7.
10-2
10-1
1
102
10
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 24 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 24 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off VCE = 24 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 100 mA; pulsed;
250
430
-
230
380
-
180
290
-
-
90
125
mV
-
180
245
mV
-
175
235
mV
-
175
235
mΩ
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
PBSS4130QA
Product data sheet
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
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PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
VBEsat
base-emitter saturation IC = 500 mA; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed;
Min
Typ
Max
Unit
-
0.89
1
V
-
0.94
1.05
V
-
0.97
1.1
V
-
0.78
0.9
V
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A; pulsed;
td
delay time
VCC = 10 V; IC = 0.5 A; IBon = 25 mA;
-
15
-
ns
tr
rise time
IBoff = -25 mA; Tamb = 25 °C
-
30
-
ns
ton
turn-on time
-
45
-
ns
ts
storage time
-
425
-
ns
tf
fall time
-
65
-
ns
toff
turn-off time
-
490
-
ns
fT
transition frequency
130
190
-
MHz
-
8
10
pF
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-007990
103
IB (mA) = 5
IC
(A)
(1)
hFE
aaa-007991
1.5
4
3.5
3
1.0
(2)
4.5
2.5
2
(3)
1.5
0.5
1
0.5
102
10-1
1
10
102
0.0
103
104
IC (mA)
VCE = 2 V
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 9.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8.
0
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PBSS4130QA
Product data sheet
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NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007992
1.2
aaa-007993
1.2
VBE
(V)
VBEsat
(V)
(1)
(1)
0.8
0.8
(2)
(2)
(3)
(3)
0.4
0.0
10-1
1
0.4
102
10
0.0
10-1
103
104
IC (mA)
1
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig. 10. Base-emitter voltage as a function of collector
current; typical values
aaa-007995
1
VCEsat
(V)
103
104
IC (mA)
Fig. 11. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-007994
1
102
VCEsat
(V)
10-1
10-1
(1)
(2)
(3)
(1)
(2)
10-2
10-2
(3)
10-3
10-1
1
10
102
10-3
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4130QA
Product data sheet
10
102
103
104
IC (mA)
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
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NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
aaa-007996
103
aaa-007997
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
(1)
10
10
(2)
1
10-1
10-1
1
(1)
(2)
(3)
1
10
102
10-1
10-1
103
104
IC (mA)
(3)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4130QA
Product data sheet
10
102
103
104
IC (mA)
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
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30 V, 1 A NPN low VCEsat (BISS) transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 16. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 17. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS4130QA
Product data sheet
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30 V, 1 A NPN low VCEsat (BISS) transistor
12. Package outline
0.87
0.95
0.75
1
0.95
1.05
0.22
0.30
2
0.16
0.24
0.1
3
0.04
max
0.34
0.40
Dimensions in mm
0.17
0.25
0.245
0.325
1.05
1.15
0.195
0.275
13-03-05
Fig. 18. Package outline DFN1010D-3 (SOT1215)
PBSS4130QA
Product data sheet
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PBSS4130QA
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30 V, 1 A NPN low VCEsat (BISS) transistor
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 19. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PBSS4130QA
Product data sheet
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30 V, 1 A NPN low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4130QA v.1
20130828
Product data sheet
-
-
PBSS4130QA
Product data sheet
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PBSS4130QA
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30 V, 1 A NPN low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PBSS4130QA
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
15 / 17
PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBSS4130QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
16 / 17
PBSS4130QA
NXP Semiconductors
30 V, 1 A NPN low VCEsat (BISS) transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 7
11
11.1
Test information ................................................... 11
Quality information ............................................. 11
12
Package outline ................................................... 12
13
Soldering .............................................................. 13
14
Revision history ................................................... 14
15
15.1
15.2
15.3
15.4
Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 August 2013
PBSS4130QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
17 / 17
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