Data Sheet

PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
11 September 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT61003PY
2. Features and benefits
•
•
•
•
•
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
3
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
8
A
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 50 mA; pulsed;
-
90
150
mΩ
-
75
110
mΩ
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
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PHPT61003NY
NXP Semiconductors
100 V, 3 A NPN high power bipolar transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E
emitter
2
E
emitter
3
E
emitter
4
B
base
mb
C
collector
Simplified outline
Graphic symbol
C
mb
B
E
1 2 3 4
sym123
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
PHPT61003NY
Package
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
SOT669
7. Marking
Table 4.
Marking codes
Type number
Marking code
PHPT61003NY
1003NAB
PHPT61003NY
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100 V, 3 A NPN high power bipolar transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
100
V
VCEO
collector-emitter voltage
open base
-
100
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
3
A
ICM
peak collector current
-
8
A
IB
base current
-
0.5
A
Ptot
total power dissipation
[1]
-
1.25
W
[2]
-
3
W
[3]
-
5
W
[4]
-
25
W
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al2O3; standard footprint.
Power dissipation from junction to mounting base.
aaa-010424
8
Ptot
(W)
6
(1)
4
(2)
2
(3)
0
-75
25
125
Tamb (°C)
225
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
2
Power derating curves
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100 V, 3 A NPN high power bipolar transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
115
K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
-
-
6
K/W
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al2O3; standard footprint.
aaa-010427
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
0.5
0.1
0.05
0.02
1
0.01
10-1
10-5
0.25
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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NXP Semiconductors
100 V, 3 A NPN high power bipolar transistor
aaa-010428
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
10
0.33
0.5
0.2
0.1
0.05
1
0.01
10-1
10-5
0.02
0.25
0
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61003NY
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100 V, 3 A NPN high power bipolar transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 500 mA; tp ≤ 300 µs;
150
250
-
80
250
-
20
100
-
10
40
-
-
90
150
mV
-
225
330
mV
-
90
150
mΩ
-
75
110
mΩ
-
0.86
1
V
-
1
1.2
V
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = 10 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = 10 V; IC = 2 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pused
VCE = 10 V; IC = 3 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.1 A; Tamb = 25 °C
-
0.67
0.85
V
td
delay time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
-
20
-
ns
tr
rise time
IBoff = -0.05 A; Tamb = 25 °C
-
300
-
ns
ton
turn-on time
-
320
-
ns
ts
storage time
-
830
-
ns
tf
fall time
-
470
-
ns
toff
turn-off time
-
1300
-
ns
PHPT61003NY
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100 V, 3 A NPN high power bipolar transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = 10 V; IC = 100 mA; f = 100 MHz;
-
140
-
MHz
-
11
-
pF
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-010261
400
hFE
aaa-010267
3
(1)
IB = 50 mA
45
IC
(A)
300
40
35
30
2
(2)
200
25
20
15
10
(3)
1
5
100
0
10-1
1
10
102
0
103
104
IC (mA)
VCE = 10 V
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4.
0
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PHPT61003NY
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100 V, 3 A NPN high power bipolar transistor
aaa-010262
1.2
aaa-010265
1.4
VBE
(V)
VBEsat
(V)
(1)
0.8
1.0
(2)
(1)
(3)
0.4
0.6
(2)
(3)
0
10-1
Fig. 6.
1
102
10
103
0.2
10-1
104
105
IC (mA)
1
102
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig. 7.
aaa-010263
1
103
104
105
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-010264
10
VCEsat
(V)
VCEsat
(V)
1
10-1
(2)
(1)
(1)
(2)
(3)
10-1
(3)
10-2
10-2
10-3
10-1
Fig. 8.
1
10
102
10-3
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT61003NY
Product data sheet
Fig. 9.
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
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100 V, 3 A NPN high power bipolar transistor
aaa-010266
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
1
aaa-010268
103
1
(2)
10-1
10-2
10-1
(1)
(3)
1
10
102
(2)
10-1
10-2
10-1
103
104
IC (mA)
(3)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT61003NY
Product data sheet
10
102
103
104
IC (mA)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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100 V, 3 A NPN high power bipolar transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 12. BISS transistor switching time definition
VBB
RB
(probe)
oscilloscope
450 Ω
VCC
RC
Vo
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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100 V, 3 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
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100 V, 3 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
(3×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
Dimensions in mm
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
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100 V, 3 A NPN high power bipolar transistor
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
Issue date
15-04-13
15-04-16
sot669_fw
Fig. 16. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
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100 V, 3 A NPN high power bipolar transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT61003NY v.4
20150911
Product data sheet
-
PHPT61003NY v.3
Modifications:
•
•
PHPT61003NY v.3
20140203
Product data sheet
-
PHPT61003NY v.2
PHPT61003NY v.2
20131213
Product data sheet
-
PHPT61003NY v.1
PHPT61003NY v.1
20140113
Product data sheet
-
PHPT61003NY
Product data sheet
Editorial update of section 11. Test information
Update of Figure 4
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100 V, 3 A NPN high power bipolar transistor
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or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
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or completeness of such information and shall have no liability for the
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PHPT61003NY
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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applications. Unless otherwise agreed in writing, the product is not designed,
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
11 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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PHPT61003NY
NXP Semiconductors
100 V, 3 A NPN high power bipolar transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PHPT61003NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
16 / 17
PHPT61003NY
NXP Semiconductors
100 V, 3 A NPN high power bipolar transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
11.1
Test information ................................................... 10
Quality information ............................................. 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 14
15
15.1
15.2
15.3
15.4
Legal information .................................................15
Data sheet status ............................................... 15
Definitions ...........................................................15
Disclaimers .........................................................15
Trademarks ........................................................ 16
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 September 2015
PHPT61003NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
17 / 17