datasheet

SKKH 570/16 E
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Tc = 85 °C
570
A
Tc = 100 °C
435
A
Chip
IT(AV)
ITRMS
ITSM
SEMIPACK® 5
Thyristor / Diode Modules
SKKH 570/16 E
i2t
sinus 180°
continuous operation
10 ms
10 ms
Tj = 25 °C
1000
A
19000
A
Tj = 135 °C
15500
A
Tj = 25 °C
1805000
A²s
Tj = 135 °C
1201250
A²s
VRSM
1700
V
VRRM
1600
V
VDRM
1600
V
(di/dt)cr
Tj = 135 °C
250
A/µs
(dv/dt)cr
Tj = 135 °C
1000
V/µs
-40 ... 135
°C
-40 ... 125
°C
1 min
3000
V
1s
3600
V
Tj
Module
Features
Tstg
• Heat transfer through aluminium nitride
ceramic isolated metal baseplate
• Precious metal pressure contacts for
high reliability
• Thyristor with amplifying gate
• UL recognized, file no. E 63 532
Typical Applications*
• AC motor softstarters
• Input converters for AC inverter drives
• DC motor control (e.g. for machine
tools)
• Temperature control (e.g. for ovens,
chemical processes)
• Professionals light dimming (studios,
theaters)
Visol
a.c.; 50 Hz; r.m.s.
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chip
VT
Tj = 25 °C, IT = 1700 A
1.44
V
VT(TO)
Tj = 135 °C
0.78
V
rT
Tj = 135 °C
0.32
mΩ
225
mA
IDD;IRD
Tj = 135 °C, VDD = VDRM; VRD = VRRM
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
µs
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 135 °C
200
µs
IH
Tj = 25 °C
150
500
mA
IL
Tj = 25 °C, RG = 33 Ω
300
2000
mA
VGT
Tj = 25 °C, d.c.
3
V
IGT
Tj = 25 °C, d.c.
200
mA
VGD
Tj = 135 °C, d.c.
0.25
V
IGD
Tj = 135 °C, d.c.
10
mA
per chip
0.069
K/W
per module
0.034
K/W
per chip
0.072
K/W
per module
0.036
K/W
per chip
0.077
K/W
per module
0.038
K/W
0.02
K/W
0.01
K/W
Rth(j-c)
Rth(j-c)
Rth(j-c)
continuous DC
sin. 180°
rec. 120°
Module
Rth(c-s)
chip
module
Ms
to heatsink M6
4.25
5.75
Nm
Mt
to heatsink M10
10.2
13.8
Nm
5 * 9,81
m/s²
a
w
1400
g
SKKH
© by SEMIKRON
Rev. 2 – 09.12.2014
1
SKKH 570/16 E
Fig. 1L: Power dissipation per thyristor vs. on-state
current
Fig. 1R: Power dissipation per thyristor vs. ambient
temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Max. power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 2 – 09.12.2014
© by SEMIKRON
SKKH 570/16 E
Fig. 4L: Power dissipation of three modules vs. direct and
rms current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 2 – 09.12.2014
3
SKKH 570/16 E
Fig. 9: Gate trigger characteristics
SKKH
SEMIPACK 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
4
Rev. 2 – 09.12.2014
© by SEMIKRON
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