datasheet

SKT 1200/18 E
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Tc = 85 °C
1200
A
Tc = 100 °C
840
A
Tj = 25 °C
30000
A
Tj = 125 °C
25500
A
Tj = 25 °C
4500000
A²s
Tj = 125 °C
3251250
A²s
VRSM
1800
V
VRRM
1800
V
Chip
IT(AV)
ITSM
i2t
Capsule Thyristor
sinus 180°
10 ms
10 ms
VDRM
Line Thyristor
SKT 1200/18 E
(di/dt)cr
Tj = 125 °C
(dv/dt)cr
Tj = 125 °C
Tj
Features
Typical Applications*
• DC motor control (e. g. for machine
tools)
• Controlled rectifiers (e. g. for battery
charging)
• AC controllers (e. g. for temperature
control)
• Recommended snubber network e. g.
for VVRMS ≤ 400 V: R = 33 /32 W, C =
1 µF
V
125
A/µs
1000
V/µs
-40 ... +125
°C
-40 ... +130
°C
Module
Tstg
• Hermetic metal case with ceramic
insulator
• Capsule package for double sided
cooling
• Shallow design with single sided
cooling
• International standard case
• Off-state and reverse voltages up to
1800 V
• Amplifying gate
1800
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chip
VT
Tj = 25 °C, IT = 3600 A
1.65
V
VT(TO)
Tj = 125 °C
0.95
V
rT
Tj = 125 °C
0.18
m
IDD;IRD
Tj = 125 °C, VDD = VDRM; VRD = VRRM
160
mA
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
µs
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 125 °C
IH
Tj = 25 °C
IL
Tj = 25 °C, RG = 33 
VGT
Tj = 25 °C, d.c.
3
250
100
250
µs
250
500
mA
500
2000
mA
V
IGT
Tj = 25 °C, d.c.
VGD
Tj = 125 °C, d.c.
0.25
V
IGD
Tj = 125 °C, d.c.
10
mA
Rth(j-c)
Rth(j-c)
Rth(j-c)
continuous DC
sin. 180°
rec. 120°
mA
SSC
K/W
DSC
0.021
SSC
0.054
K/W
DSC
0.0225
K/W
SSC
0.06
K/W
DSC
0.027
K/W
K/W
Module
Rth(c-s)
SSC
0.01
K/W
DSC
0.005
K/W
F
22
25
a
KN
m/s²
w
480
g
SKT
© by SEMIKRON
Rev. 0 – 08.07.2013
1
SKT 1200/18 E
Fig. 1L: Power dissipation vs. on-state current
Fig. 1R: Power dissipation vs. ambient temperature
Fig. 2L: Rated on-state current vs. case temperature
Fig. 2R: Rated on-state current vs. case temperature
Fig. 3: Recovered charge vs. current decrease
Fig. 4: Transient thermal impedance vs. time
2
Rev. 0 – 08.07.2013
© by SEMIKRON
SKT 1200/18 E
Fig. 5: Thermal resistance vs. conduction angle
Fig. 6: On-state characteristics
Fig. 7: Power dissipation vs. on-state current
Fig. 8: Surge overload current vs. time
Fig. 9: Gate trigger characteristics
© by SEMIKRON
Rev. 0 – 08.07.2013
3
SKT 1200/18 E
HK/Gate leads: ID-No.:33901270
B14
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
4
Rev. 0 – 08.07.2013
© by SEMIKRON
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