Datasheet

AOT210L/AOB210L
30V N-Channel MOSFET
General Description
Product Summary
The AOT210L/AOB210L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of RDS(ON) and Crss.
VDS
30V
105A
ID (at VGS=10V)
< 2.9mΩ (< 2.6mΩ∗)
RDS(ON) (at VGS=10V)
< 3.7mΩ (< 3.5mΩ∗)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
TO-263
TO220
Top View
Top View
Bottom View
D
D2PAK
D
Bottom View
D
D
D
G
G
D
S
S
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
S
S
Maximum
30
Units
V
±20
V
82
IDM
A
400
20
IDSM
TA=70°C
G
105
ID
TC=100°C
S
A
16
Avalanche Current C
IAS, IAR
68
A
Avalanche energy L=0.1mH C
EAS, EAR
231
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
1.9
Steady-State
Steady-State
RθJA
RθJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
88
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
176
PD
TC=100°C
-55 to 175
Typ
12
54
0.7
°C
Max
15
65
0.85
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev0 : Sep 2010
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Page 1 of 6
AOT210L/AOB210L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
TJ=55°C
5
100
VGS=10V, ID=20A
VGS=4.5V, ID=20A
TO220
3
3.7
VGS=10V, ID=20A
TO263
2.1
2.6
VGS=4.5V, ID=20A
TO263
VDS=5V, ID=20A
2.7
78
3.5
0.65
1
V
105
A
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
A
4.7
VSD
Crss
nA
2.9
Forward Transconductance
Output Capacitance
2.2
3.7
gFS
Coss
1.7
µA
2.4
TO220
IS
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
mΩ
S
2800
3520
4300
pF
920
1320
1720
pF
50
90
120
pF
0.5
1
1.5
Ω
39
48
58
nC
17
22
27
nC
7
9
11
nC
4
7
10
nC
VGS=10V, VDS=20V, RL=0.75Ω,
RGEN=3Ω
11
ns
10
ns
38
ns
11
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
14
21
28
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40
58
76
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Sep 2010
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Page 2 of 6
AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
7V
VDS=5V
3.5V
80
3V
80
60
ID(A)
ID (A)
60
40
40
20
20
125°C
25°C
Vgs=2.5V
0
0
0
1
2
3
4
1
5
8
2
2.5
3
3.5
4
Normalized On-Resistance
2
6
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
VGS=4.5V5
ID=20A 2
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
8
ID=20A
1.0E+01
40
1.0E+00
6
IS (A)
RDS(ON) (mΩ)
125°C
125°C
4
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
25°C
1.0E-05
0.0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0 : Sep 2010
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=20V
ID=20A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000
Coss
1000
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
RDS(ON)
limited
10µs
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
10ms
10.0
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
VDS (Volts)
500
100µs
Power (W)
100.0
5
30
600
1000.0
ID (Amps)
Crss
0
0
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
TJ(Max)=175°C
TC=25°C
17
5
2
10
400
300
200
10
100
100
0.0001
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.85°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
Ciss
Single Pulse
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0 : Sep 2010
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Page 4 of 6
AOT210L/AOB210L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
10
160
120
80
40
0
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
120
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
90
Power (W)
Current rating ID(A)
TA=25°C
60
17
5
2
10
10
30
0
0
10
ZθJA Normalized Transient
Thermal Resistance
100
1
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
175
1
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
0.001
0.01
0.1
1
Ton
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0 : Sep 2010
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Page 5 of 6
AOT210L/AOB210L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0 : Sep 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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