AOT466L/AOB466L 60V N-Channel MOSFET General Description Product Summary The AOT466L & AOB466L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 180A RDS(ON) (at VGS=10V) < 3.9mΩ 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Bottom View D2PAK Top View D D Bottom View D D D G G D S S D S G TC=25°C Pulsed Drain Current C Continuous Drain Current Maximum 60 ±25 TA=25°C V 140 IDM A 540 15 IDSM TA=70°C Units V 180 ID TC=100°C S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G G A 12 Avalanche Current C IAS, IAR 80 A Avalanche energy L=0.3mH C EAS, EAR 960 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Otc 2010 1.9 Steady-State Steady-State RθJA RθJC W 1.2 TJ, TSTG Symbol t ≤ 10s W 167 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD TC=100°C -55 to 175 Typ 12 54 0.35 www.aosmd.com °C Max 15 65 0.45 Units °C/W °C/W °C/W Page 1 of 6 AOT466L/AOB466L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V VDS=60V, VGS=0V Zero Gate Voltage Drain Current 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.6 VGS=10V, VDS=5V 540 100 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V 1 TJ=55°C TO220 VGS=10V, ID=20A TO263 VDS=5V, ID=20A Max 60 VGS(th) ID(ON) IS Typ 4.3 5 µA nA V A 3.2 3.9 5.2 6.3 2.9 60 3.6 mΩ S 0.67 mΩ 1 V 180 A 4485 5607 6730 pF VGS=0V, VDS=30V, f=1MHz 750 1076 1400 pF 280 485 680 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.75 1.2 Ω VGS=10V, VDS=30V, ID=20A 85 108 130 nC 24 30 36 nC 27 46 65 nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 31 ns 29 ns 41 ns 13 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 35 50 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 190 273 355 nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Otc 2010 www.aosmd.com Page 2 of 6 AOT466L/AOB466L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 80 VDS=5V 80 7V 6V 60 ID(A) ID (A) 60 40 40 5.5V 20 125°C 20 25°C VGS=5V 0 0 0 1 2 3 4 2 5 6 Normalized On-Resistance VGS=10V 4 3 2 1 0 5 6 7 2.0 VGS=10V ID=20A 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 100 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 7 ID=20A 1.0E+01 6 40 125°C 1.0E+00 5 125°C IS (A) RDS(ON) (mΩ) 4 2.2 5 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.0E-01 25°C 4 1.0E-02 3 25°C 1.0E-03 2 1.0E-04 6 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: Otc 2010 7 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT466L/AOB466L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9000 7000 Capacitance (pF) VGS (Volts) 8000 VDS=30V ID=20A 8 6 4 Ciss 6000 5000 4000 3000 Coss Crss 2000 2 1000 0 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 120 1000.0 100µs 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 Power (W) ID (Amps) 4000 10µs 10µs RDS(ON) limited 10.0 ZθJC Normalized Transient Thermal Resistance 60 TJ(Max)=175°C TC=25°C 17 5 2 10 3000 2000 1000 1 10 VDS (Volts) 100 1000 0 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) Figure 10: Single Pulse Power Rating 18 Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 5000 100.0 10 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W 0.1 PD 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: Otc 2010 www.aosmd.com Page 4 of 6 AOT466L/AOB466L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 200 TA=25°C 160 Power (W) Current rating ID(A) 0 120 80 100 17 5 2 10 10 40 0 0 25 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 50 175 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 1 100 10000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: Otc 2010 www.aosmd.com Page 5 of 6 AOT466L/AOB466L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: Otc 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6