Datasheet

AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description
Product Summary
The AOT22N50 & AOTF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
[email protected]
22A
RDS(ON) (at VGS=10V)
< 0.26Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT22N50L&AOTF22N50L
Top View
TO-220F
TO-220
G
D
D
G
S
AOT22N50
G
D
S
S
AOTF22N50
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT22N50L
AOTF22N50
AOTF22N50L
TO220 Green
TO-220F Pb Free
TO-220F Green
Tube
Tube
Tube
1000
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT22N50
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF22N50 AOTF22N50L
500
±30
Units
V
V
22
22*
22*
15
15*
15*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
7
A
Repetitive avalanche energy C
EAR
735
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
dv/dt
1470
5
50
mJ
V/ns
W
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
PD
417
3.3
TL
0.4
-55 to 150
39
0.3
300
Symbol
RθJA
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.2.0: October 2014
88
AOT22N50
65
0.5
0.3
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°C
AOTF22N50 AOTF22N50L
65
65
-2.5
W/ oC
°C
-3.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.57
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=11A
gFS
Forward Transconductance
VDS=40V, ID=11A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
±100
3.4
µA
4
4.5
nΑ
V
0.21
0.26
Ω
1
V
S
IS
Maximum Body-Diode Continuous Current
22
A
ISM
Maximum Body-Diode Pulsed Current
88
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2465
3086
3710
pF
VGS=0V, VDS=25V, f=1MHz
200
290
380
pF
14
24
35
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
55
69
83
nC
17
22
27
nC
12
24
36
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=400V, ID=22A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=22A,dI/dt=100A/µs,VDS=100V
415
524
630
Qrr
Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V
7.5
9.6
12
Body Diode Reverse Recovery Time
VGS=10V, VDS=250V, ID=22A,
RG=25Ω
60
ns
122
ns
124
ns
77
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: October 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
40
VDS=40V
10V
30
6.5V
20
-55°C
ID(A)
ID (A)
10
6V
125°C
1
10
VGS=5.5V
25°C
0
0
5
10
15
20
25
0.1
30
0
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
0.4
Normalized On-Resistance
3
0.3
RDS(ON) (Ω)
4
VGS=10V
0.2
0.1
5
10
15
20
2
1.5
1
0.5
0
-100
0.0
0
VGS=10V
ID=11A
2.5
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0: October 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=400V
ID=22A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
100
Crss
3
0
10
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0.1
100
100
100
10µs
RDS(ON)
limited
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
RDS(ON)
limited
100µs
10
1ms
10
10ms
10ms
1
ID (Amps)
ID (Amps)
1ms
DC
0.1
1s
0.1
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
1
VDS (Volts)
100
RDS(ON)
limited
100µs
10ms
1
DC
0.1s
1s
0.1
1000
20
Current rating ID(A)
1ms
100
25
10µs
10
10
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF22N50 (Note F)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT22N50 (Note F)
ID (Amps)
0.1s
DC
1
15
10
5
TJ(Max)=150°C
TC=25°C
0.01
0
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF22N50L (Note F)
Rev.2.0: October 2014
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0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PPDDM
0.01
TTonon
Single Pulse
0.001
0.000001
0.00001
TT
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT22N50 (Note F)
1
10
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PPDDM
0.01
TTonon
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
TT
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PPDDM
0.01
TTonon
Single Pulse
0.001
1E-05
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF22N50L (Note F)
Rev.2.0: October 2014
0.0001
0.001
TT
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100
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0: October 2014
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6
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