Datasheet

AOT25S65/AOB25S65/AOTF25S65
650V 25A α MOS
TM
Power Transistor
General Description
Product Summary
The AOT25S65 & AOB25S65 & AOTF25S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
750V
IDM
104A
RDS(ON),max
0.19Ω
Qg,typ
26.4nC
Eoss @ 400V
5.8µC
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT25S65L & AOB25S65 & AOTF25S65L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
D
S
AOT25S65
G
D
S
AOTF25S65
Gate-Source Voltage
VGS
TC=25°C
TC=100°C
Pulsed Drain Current
C
ID
S
AOB25S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT25S65/AOB25S65
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current
G
S
G
AOTF25S65
650
AOTF25S65L
±30
25
16
IDM
Units
V
V
25*
25*
16*
16*
A
104
Avalanche Current C
IAR
7
A
Repetitive avalanche energy C
EAR
96
mJ
Single pulsed avalanche energy G
EAS
TC=25°C
B
Power Dissipation
Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
PD
TJ, TSTG
TL
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
2.9
dv/dt
Symbol
RθJA
mJ
750
357
50
0.4
100
20
-55 to 150
40
W
0.3
W/ oC
V/ns
°C
300
°C
AOT25S65/AOB25S65
AOTF25S65
AOTF25S65L
Units
65
65
65
°C/W
0.5
0.35
-2.5
-3.1
°C/W
°C/W
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Page 1 of 7
AOT25S65/AOB25S65/AOTF25S65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
650
-
-
ID=250µA, VGS=0V, TJ=150°C
700
750
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
-
-
1
VDS=520V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=12.5A, TJ=25°C
-
0.165
0.19
Ω
VGS=10V, ID=12.5A, TJ=150°C
-
0.47
0.53
Ω
IS=12.5A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
25
A
Maximum Body-Diode Pulsed Current
-
-
104
A
-
1278
-
pF
-
87
-
pF
-
64.5
-
pF
-
236.7
-
pF
VGS=0V, VDS=100V, f=1MHz
-
1.4
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.9
-
Ω
-
26.4
-
nC
-
6.2
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=12.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
9.5
-
nC
tD(on)
Turn-On DelayTime
-
29
-
ns
tr
Turn-On Rise Time
-
30
-
ns
tD(off)
Turn-Off DelayTime
-
112
-
ns
tf
trr
Turn-Off Fall Time
-
34
-
ns
IF=12.5A,dI/dt=100A/µs,VDS=400V
VGS=10V, VDS=400V, ID=12.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
408
-
ns
Irm
IF=12.5A,dI/dt=100A/µs,VDS=400V
-
33
-
Qrr
Body Diode Reverse Recovery Charge IF=12.5A,dI/dt=100A/µs,VDS=400V
-
8.27
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Mar 2012
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Page 2 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
50
10V
10V
30
40
7V
ID (A)
30
ID (A)
6V
25
6V
5.5V
20
5.5V
20
15
5V
10
5V
10
VGS=4.5V
5
VGS=4.5V
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
1000
0.5
-55°C
VDS=20V
100
0.4
RDS(ON) (Ω )
125°C
10
ID(A)
7V
1
0.3
VGS=10V
0.2
25°C
0.1
0.1
0.0
0.01
2
4
6
8
0
10
VGS(Volts)
Figure 3: Transfer Characteristics
20
30
40
50
60
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
1.2
3
2.5
1.1
VGS=10V
ID=12.5A
BVDSS (Normalized)
Normalized On-Resistance
10
2
1.5
1
0.5
0
-100
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev1: Mar 2012
-50
1
0.9
0.8
0.7
-100
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50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=12.5A
1.0E+00
9
VGS (Volts)
IS (A)
25°C
1.0E-01
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
0
8
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
24
32
40
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
12
Ciss
10
1000
100
8
Eoss(uJ)
Capacitance (pF)
16
Coss
6
Eoss
4
10
2
Crss
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
100
200
300
400
500
VDS (Volts)
Figure 10: Coss stored Energy
600
1000
1000
100
100
RDS(ON)
limited
10
10µs
100µs
1
1ms
DC
ID (Amps)
ID (Amps)
0
600
10
10µs
RDS(ON)
limited
100µs
1ms
1
10ms
10ms
0.1
DC
0.1
TJ(Max)=150°C
TC=25°C
0.01
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)25S65 (Note F)
Rev1: Mar 2012
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0.1
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF25S65(Note F)
Page 4 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
900
1000
750
10µs
RDS(ON)
limited
10
100µs
1ms
1
10ms
DC
0.1
EAS(mJ)
ID (Amps)
100
600
450
300
0.1s
TJ(Max)=150°C
TC=25°C
1s
150
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Avalanche energy
VDS (Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF25S65L(Note F)
30
Current rating ID(A)
25
20
15
10
5
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev1: Mar 2012
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Page 5 of 7
AOT25S65/AOB25S65/AOTF25S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.001
0.00001
Ton
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)25S65 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF25S65 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF25S65L (Note F)
Rev1: Mar 2012
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Page 6 of 7
AOT25S65/AOB25S65/AOTF25S65
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev1: Mar 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7