Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTN6266
Preliminary
Power MOSFET
30A, 60V N-CHANNEL TRENCH
MOSFET

DESCRIPTION
1
The UTC UTN6266 is an N-Channel trench mosfet, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, high switching speed and low gate charge.
The UTC UTN6266 is suitable for Synchronus Rectification in
DC/DC and AC/DC Converters and industrial and Motor Drive
applications.

1
TO-251
TO-220
1
FEATURES

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTN6266L-TA3-R
UTN6266G-TA3-R
TO-220
UTN6266L-TM3-R
UTN6266G-TM3-R
TO-251
UTN6266G-S08-R
SOP-8
UTN6266G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5x6)
SOP-8
* RDS(ON)<15mΩ @ VGS=10V, ID=20A
RDS(ON)<19mΩ @ VGS=4.5V, ID=18A
* Low gate charge
* Low RDS(ON)
* High switching speed
1
G
G
S
S
2
D
D
S
S
Pin Assignment
3 4 5 6
S - - S - - S G D D
S G D D
7
D
D
8
D
D
Packing
Tape Reel
Tube
Tape Reel
Tape Reel
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UTN6266

Preliminary
Power MOSFET
MARKING
Package
Marking
TO-220 / TO-251
SOP-8
DFN-8(5×6)
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
60
V
±20
V
Continuous
30
A
Drain Current
Pulsed
90
A
Avalanche Current (Note 3)
20
A
Avalanche Energy (Note 2, 3)
280
mJ
TO-220
2
W
TO-251
1.2
W
Power Dissipation
PD
SOP-8
1.5
W
DFN-8(5×6)
1.92
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse width by junction temperature TJ(max)=150°C.
3. L = 1.4mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
ID
IDM
IAS
EAS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
TO-220
200
TO-251
60
Junction to Ambient
θJA
SOP-8
85
DFN-8(5×6)
65
TO-220
4.38
TO-251
2.6
Junction-to-Case
θJC
SOP-8
24
DFN-8(5×6)
12
Notes: 1. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=10V, ID=20A, TJ=125°C
VGS=4.5V, ID=18A
1.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=30V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=30V, ID=20A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=30V, RL=1.5Ω,
Rise Time
tR
RGEN=3Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage (Note2)
VSD
IS=1A, VGS=0V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface Mounted on 1in 2 pad area.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
2.0
12
20.5
15
1
5
+100
-100
V
µA
µA
nA
nA
2.5
15
25
19
V
mΩ
mΩ
mΩ
390
190
170
1.1
pF
pF
pF
Ω
6
0.5
0.5
60
75
500
230
nC
nC
nC
ns
ns
ns
ns
0.72
30
1
A
V
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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www.unisonic.com.tw
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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