UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50-P can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.5 A * 100% avalanche tested * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N50L-TA3-T 5N50G-TA3-T 5N50L-TF3-T 5N50G-TF3-T 5N50L-TF1-T 5N50G-TF1-T 5N50L-TF2-T 5N50G-TF2-T 5N50L-TM3-R 5N50G-TM3-R 5N50L-TMS4-R 5N50G-TMS4-R 5N50L-TN3-R 5N50G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S4 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel Tape Reel 1 of 7 QW-R205-027.B 5N50-P Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-027.B 5N50-P Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous ID 5 A Drain Current Pulsed (Note 2) IDM 20 A Avalanche Current (Note 2) IAR 5 A Single Pulsed (Note 3) EAS 190 mJ Avalanche Energy 7.3 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 125 W TO-220F/TO-220F1 38 W Power Dissipation PD TO-220F2 TO-251/TO-251S4 54 W TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 15.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-251S4 TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-251S4 TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 °C/W 110 °C/W 1 °C/W 3.25 °C/W 2.13 °C/W θJA θJC 3 of 7 QW-R205-027.B 5N50-P Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=500V, VGS=0V Drain-Source Leakage Current IDSS VDS=400V, TC=125°C Forward VGS=30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=50V, Gate to Source Charge QGS ID=1.3A, ID=100μA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, Rise Time tR R Turn-OFF Delay Time tD(OFF) G=25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V Reverse Recovery Time trr IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V V/°C 0.5 1 10 100 -100 2.0 1.2 4.0 1.6 580 66 10 18 2.2 9.7 30 80 110 90 263 1.9 µA nA nA V Ω pF pF pF 24 nC nC nC ns ns ns ns 5 A 20 A 1.4 V ns µC 4 of 7 QW-R205-027.B 5N50-P Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R205-027.B 5N50-P Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-027.B 5N50-P Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Continuous Drain-Source Diode Forward Current vs. Source to Drain Voltage 7 Drain-Source On-State Resistance Characteristics 3 Continuous Drain-Source Diode Forward Current, IS (A) VGS=10V, ID=2.5A Drain Current, ID (A) 2.5 2 1.5 1 0.5 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 5 6 5 4 3 5 1 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-027.B