UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.2Ω @ VGS = 10V, ID = 4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free TO-220 8N60KL-TA3-T 8N60KG-TA3-T 8N60KL-TF1-T 8N60KG-TF1-T TO-220F1 8N60KL-TF2-T 8N60KG-TF2-T TO-220F2 TO-220F 8N60KL-TF3-T 8N60KG-TF3-T 8N60KL-TF3T-T 8N60KG-TF3T-T TO-220F3 Note: Pin Assignment: G: Gate D: Drain S: Source 8N60KL-TF1-T Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube (1) T: Tube (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 TF3: TO-220F, TF3T: TO-220F3 (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R205-035.D 8N60K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-035.D 8N60K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 8 A Drain Current Pulsed (Note 2) IDM 32 A Avalanche Energy Single Pulsed (Note 3) EAS 365 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation P TO-220F/TO-220F1 D 48 W TO-220F2/TO-220F3 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 11.4mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. 4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C. THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2/TO-220F3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 0.85 UNIT °C/W °C/W 2.6 °C/W 3 of 7 QW-R205-035.D 8N60K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 600 V VDS = 600 V, VGS = 0V 10 µA Forward VGS = 30 V, VDS = 0V 100 nA Gate-Source Leakage Current IGSS -100 nA Reverse VGS = -30 V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4.0A 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1120 1255 pF VDS = 25V, VGS = 0V, Output Capacitance COSS 120 135 pF f = 1MHz 13 16 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 28 36 nC VDS=50V, VGS=1.0V, Gate-Source Charge QGS 8 nC ID=1.3A (Note 1, 2) 6 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 80 90 ns Turn-On Rise Time tR 89 100 ns VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 125 160 ns Turn-Off Fall Time tF 64 80 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 8A 1.4 V Maximum Continuous Drain-Source Diode IS 8 A Forward Current Maximum Pulsed Drain-Source Diode ISM 32 A Forward Current Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-035.D 8N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-035.D 8N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-035.D 8N60K-MT Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-035.D