Datasheet

UNISONIC TECHNOLOGIES CO., LTD
18NM70-SH
Power MOSFET
18A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 18NM50-SH is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged avalanche
characteristics. This power MOSFET is usually used at DC-DC,
AC-DC converters for power applications.

FEATURES
* RDS(ON) < 0.35Ω @ VGS=10V, ID=9A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18NM70L-TA3-T
18NM70G-TA3-T
18NM70L-TF3-T
18NM70G-TF3-T
18NM70L-TF1-T
18NM70G-TF1-T
18NM70L-TF2-T
18NM70G-TF2-T
18NM70L-TF3T-T
18NM70G-TF3T-T
18NM70L-TM3-T
18NM70G-TM3-T
18NM70L-TN3-R
18NM70G-TN3-R
18NM70L-TQ2-T
18NM70G-TQ2-T
18NM70L-TQ2-R
18NM70G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
TO-263
TO-263
1
G
G
G
G
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
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QW-R205-076.B
18NM70-SH

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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18NM70-SH

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current
IDM
45
A
Avalanche Current
IAR
5
A
Avalanche Energy
Single Pulsed
EAS
700
mJ
Peak Diode Recovery dv/dt
dv/dt
4.0
V/ns
TO-220/TO-263
235
W
TO-220F/TO-220F1
Power Dissipation
PD
39
W
TO-220F2/ TO-220F3
TO-251/TO-252
192
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=56mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ=25°С
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Drain current limited by maximum junction temperature.

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3/TO-263
TO-251/TO-252
TO-220/TO-263
TO-220F/TO-220F1
Junction to Case
TO-220F2/TO-220F3
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
RATING
62.5
UNIT
°C/W
110
0.53
θJC
3.2
°C/W
0.65
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=700V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate Source Charge
QGS
IG=100µA (Note 1, 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS=30V, VGS=10V, ID=0.5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS
VGS=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Repetitive
Forward Current
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note )
Reverse Recovery Time
trr
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
700
2.5
10
±100
V
µA
nA
4.5
0.35
V
Ω
340
295
30
pF
pF
pF
200
11
30
70
175
300
175
nC
nC
nC
ns
ns
ns
ns
440
7.8
18
A
54
A
1.5
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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