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AMD533CE
Analog Power
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30
-30
ID (A)
45 @ VGS = 4.5V
35 @ VGS = 10V
70 @ VGS = -4.5V
52 @ VGS = -10V
29
36
-20
-26
D1
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
G
S
G
1
S
2
D2
1
N-Channel MOSFET
S1 G1 D S2 G2
P-Channel MOSFET
ESD Protected
2000V
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel Units
VDS
30
-30
Drain-Source Voltage
V
VGS
Gate-Source Voltage
±20
±20
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
a
36
-26
30
-21
IDM
40
-40
IS
30
-30
50
50
ID
o
TA=25 C PD
Power Dissipation
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Case
a
RθJA
RθJC
-55 to 175
Maximum
A
A
W
o
C
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
2
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Limits
Ch Min Typ Max Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
a
On-State Drain Current
Drain-Source On-Resistancea
Forward Tranconductancea
IDSS
ID(on)
rDS(on)
gfs
VGS = VDS, ID = 250 uA
N
0.6
VGS = VDS, ID = -250 uA
VGS = -20 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 6.9 A
VGS = 4.5 V, ID = 6 A
VGS = -10 V, ID = -5.2 A
VGS = -4.5 V, ID = -4.2 A
VDS = 15 V, ID = 6.9 A
VDS = -15 V, ID = -5.2 A
P
P
N
P
N
N
P
-0.6
V
±100
±100
-1
1
20
-20
nA
uA
A
35
45
52
70
N
P
N
P
25
10
N
P
N
P
N
6.0
10
1.0
2.4
1.5
P
N
P
N
P
N
P
N
P
3.9
7.4
7.6
4
6.8
22.2
33.6
3.6
23.2
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall-Time
tr
td(off)
tf
N-Channel
VDS=15V, VGS=10V, ID=6.9A
P-Channel
VDS=-15V, VGS=-10V, ID=-5.2A
N-Chaneel
VDD=15V, VGS=10V, ID=1A ,
RGEN=6Ω,
P-Channel
VDD=-15V, VGS=-10V, ID=-1A
RGEN=6Ω
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
Typical Electrical Characteristics (N-Channel)
30
TA = -55oC
VDS = 5V
VGS = 10V
25
6.0V
20
5.0V
4.0V
15
3.0V
10
5
25oC
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
125oC
20
15
10
5
0
0
0
0.5
1
1.5
2
0.5
2.5
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
1500
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2
4.5V
1.5
6.0V
1
10V
f = 1MHz
VGS = 0 V
1200
CISS
900
600
COSS
300
CRSS
0
0.5
0
5
10
15
20
25
0
30
1.6
10
15V
6
4
2
0
6
9
12
25
30
1.4
1.2
1.0
0 .8
0 .6
15
-50
Qg, GATE CHARGE (nC)
-2 5
0
25
50
75
10 0
12 5
150
T J Juncation Temperature ( )
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
3
PRELIMINARY
20
VGS = 10V
ID = 7A
ID = 7A
3
15
Figure 4. Capacitance Characteristics
Normalized R DS(on)
VG S, G A TE-SOU RCE V OLTAG E (V )
Figure 3. On Resistance Vs Vgs Voltage
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
8
5
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
Typical Electrical Characteristics (N-Channel)
RDS(ON), ON-RESISTANCE (OHM)
IS, REVERSE DRAIN CURRENT (A)
100
VGS = 0V
10
o
1
TA = 125 C
o
25 C
0.1
0.01
0.001
0.0001
0.1
ID = 7 A
0.08
0.06
0.04
o
TA = 25 C
0.02
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
Figure 7. Transfer Characteristics
6
8
50
VDS = VGS
ID = -250mA
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125
10
Figure 8. On-Resistance with Gate to Source Voltage
2.2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
150 175
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
40
30
20
10
0
0.001
0.01
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
Rq J A (t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.0
P(p k)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
Typical Electrical Characteristics (P-Channel)
30
15
-6.0V
o
VDS = -5V
-5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -10V
20
-4.0V
10
o
TA = -55 C
25 C
12
o
125 C
9
6
3
-3.0V
0
0
0
1
2
3
4
5
1
6
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3
3.5
4
4.5
with Source Current and Temperature
800
2
f = 1 MHz
VGS = 0 V
700
1.8
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
Figure 2. Body Diode Forward Voltage Variation
Figure 1. On-Region Characteristics
1.6
-4.5V
-6.0V
1.4
1.2
-10V
1
CISS
600
500
400
300
COSS
200
100
0.8
0
6
12
18
24
CRSS
0
30
0
5
-ID, DRAIN CURRENT (A)
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
1.6
ID = -5.7A
VGS = 10V
ID = 5.7A
1.4
8
-15V
Normalized RDS(on)
-VGS, GATE-SOURCE VOLTAGE (V)
2
-VGS, GATE TO SOURCE VOLTAGE (V)
6
4
2
1.2
1.0
0.8
0.6
0
0
2
4
6
8
-50
10
0
25
50
75
100
125
150
TJ Juncation Temperature (C)
Qg, GATE CHARGE (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
5
PRELIMINARY
-25
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
0.25
100
ID = -5.7A
VGS =0V
10
RDS(ON), ON-RESISTANCE (OHM)
-IS, REVERSE DRAIN CURRENT (A)
Typical Electrical Characteristics (P-Channel)
o
TA = 125 C
1
0.1
o
25 C
0.01
0.001
0.0001
0
0.2
0.15
0.1
0.05
TA = 25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
50
VDS = VGS
ID = -250mA
2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
2.2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125 150 175
TA, AMBIENT TEMPERATURE (oC)
SINGLE PULSE
RqJA = 125C/W
TA = 25C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D =0.5
0.2
Rq J A(t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.1
0.05
P (pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve
6
PRELIMINARY
Publication Order Number:
DS-AMD533CE_D
AMD533CE
Analog Power
7
PRELIMINARY
Publication Order Number:
DS-AMD533CE_D