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Analog Power
AMD560C
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
28 @ VGS = 10V
60
35 @ VGS = 4.5V
80 @ VGS = -10V
-60
105 @ VGS = -4.5V
ID (A)
35
31
-20
-18
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
60
-60
VGS
Gate-Source Voltage
±20
±20
TC=25°C
ID
35
-20
Continuous Drain Current a
b
I
140
-80
Pulsed Drain Current
DM
a
TC=25°C
IS
35
-20
Continuous Source Current (Diode Conduction)
a
T
=25°C
P
50
50
Power Dissipation
C
D
TJ, Tstg
TJ, Tstg -55 to 175
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol Maximum
RθJA
50
RθJC
3
c
Units
°C/W
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
c.
Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Symbol Test Conditions
Static
VDS = VGS, ID = 250 uA
VGS(th)
VDS = VGS, ID = -250 uA
IGSS
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
IDSS
VDS = -48 V, VGS = 0 V
VDS = 5 V, VGS = 10 V
ID(on)
VDS = -5 V, VGS = -10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 16 A
rDS(on)
VGS = -10 V, ID = -10 A
VGS = -4.5 V, ID = -8 A
VDS = 15 V, ID = 20 A
gfs
VDS = -15 V, ID = -10 A
IS = 17 A, VGS = 0 V
VSD
IS = -10 A, VGS = 0 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min
(Nch)
(Pch)
(Nch)
(Pch)
(Nch)
(Pch)
(Nch)
(Nch)
(Pch)
(Pch)
(Nch)
(Pch)
(Nch)
(Pch)
Dynamic b
N - Channel
VDS = 30 V, VGS = 4.5 V,
ID = 20 A
N - Channel
VDS = 30 V, RL = 1.5 Ω,
ID = 20 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -30 V, VGS = 4.5 V,
ID = -10 A
P - Channel
VDS = -30 V, RL = 3 Ω,
ID = -10 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
2
Typ
Max
1
-1
±100
1
-1
45
-25
Unit
V
V
nA
uA
A
A
24
30
85
105
15
11
0.89
-0.98
9
3
4
5
5
27
8
1422
84
79
10
5
4
5
4
30
11
1143
84
60
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Typical Electrical Characteristics - N-channel
0.1
20
0.08
3V
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
0.06
3.5V
0.04
4V
0.02
15
10
5
4V,4.5V,6V,8V,10V
0
0
0
2
4
ID-Drain Current (A)
0
6
1
3
4
2. Transfer Characteristics
100
0.2
TJ = 25°C
ID = 20A
TJ = 25°C
IS - Source Current (A)
0.15
0.1
0.05
0
10
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
6
2000
F = 1MHz
10V,8V,6V,4.5V
Ciss
4V
1500
Capacitance (pf)
ID - Drain Current (A)
5
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
RDS(on) - On-Resistance(Ω)
2
4
3.5V
3V
2
1000
500
Coss
0
Crss
0
0
0.05
0.1
0.15
0.2
0.25
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Typical Electrical Characteristics - N-channel
2.5
VDS = 30V
ID = 20A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
2
1.5
1
0.5
0
5
10
15
20
-50 -25
0
50
75
100 125 150 175
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
60
PEAK TRANSIENT POWER (W)
1000
10 uS
100
100 uS
1 mS
ID Current (A)
25
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
DC
1
0.1
Idm limit
50
40
30
20
10
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 50 °C /W
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Typical Electrical Characteristics - P-channel
15
TJ = 25°C
0.15
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
0.2
3V
3.5V
0.1
4V,4.5V,6V,8V,10V
0.05
10
5
0
0
0
2
4
6
8
ID-Drain Current (A)
0
10
1
1. On-Resistance vs. Drain Current
4
5
6
10
TJ = 25°C
ID = -10A
TJ = 25°C
0.6
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
2. Transfer Characteristics
0.8
0.4
0.2
0
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
1600
5
F = 1MHz
1400
10V,8V,6V,4.5V,4V
3.5V
4
Ciss
1200
3V
Capacitance (pf)
ID - Drain Current (A)
2
VGS - Gate-to-Source Voltage (V)
3
2
1000
800
600
400
1
Coss
200
0
Crss
0
0
0.2
0.4
0.6
0.8
0
5
10
15
20
1000
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
6. Capacitance
5
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Typical Electrical Characteristics - P-channel
2.5
VDS = -30V
ID = -10A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
2
1.5
1
0.5
0
0
5
10
15
20
-50 -25
25
25
50
75
100 125 150 175
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
1000
PEAK TRANSIENT POWER (W)
60
10 uS
100
100 uS
1 mS
ID Current (A)
0
10 mS
10
100 mS
1 SEC
1
10 SEC
100 SEC
DC
1
0.1
Idm limit
Limited by
RDS
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 50 °C /W
0.2
0.1
0.1
P(pk)
0.05
0.02
Single Pulse
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AMD560C_1A
Analog Power
AMD560C
Package Information
© Preliminary
7
Publication Order Number:
DS_AMD560C_1A