Analog Power AM1523CE N & P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 90 @ VGS = 4.5V 20 120 @ VGS = 2.5V 200 @ VGS = -4.5V -20 370 @ VGS = -2.5V ID(A) 1.5 1.3 -1.0 -0.5 SC70-6 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±8 ±8 TA=25°C 1.5 1.0 ID Continuous Drain Current a TA=70°C 1.3 0.9 b IDM Pulsed Drain Current 5 -5 a I 0.43 -0.45 Continuous Source Current (Diode Conduction) S T =25°C 0.3 0.3 A PD Power Dissipation a TA=70°C 0.21 0.21 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 5 sec Steady State Symbol Maximum 415 RθJA 460 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±8 V VDS = 16 V, VGS = 0 V (N-ch) VDS = -16 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 4.5 V (N-ch) VDS = -5 V, VGS = -4.5 V (P-ch) VGS = 4.5 V, ID = 1.2 A (N-ch) VGS = 2.5 V, ID = 0.96 A (N-ch) VGS = -4.5 V, ID = -0.8 A (P-ch) VGS = -2.5 V, ID = -0.64 A (P-ch) VDS = 10 V, ID = 1.2 A (N-ch) VDS = -10 V, ID = -0.8 A (P-ch) IS = 0.2 A, VGS = 0 V (N-ch) IS = -0.2 A, VGS = 0 V (P-ch) Dynamic N - Channel VDS = 10 V, VGS = 4.5 V, ID = 1.2 A N - Channel VDD = 10 V, RL = 8.3 Ω, ID = 1.2 A, VGEN = 4.5 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -10 V, VGS = 4.5 V, ID = -0.8 A P - Channel VDD = -10 V, RL = 12.5 Ω, ID = -0.8 A, VGEN = -4.5 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 Min Typ Max 0.3 -0.3 ±10 1 -1 1.5 -1.5 Unit V V uA uA A A 90 120 200 370 3 5 0.65 -0.66 5 0.3 0.7 8 13 25 8 73 25 20 4 0.5 0.9 8 10 28 13 120 28 25 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE Typical Electrical Characteristics - N-channel 2.0 0.25 0.2 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1.8V 0.15 2V 2.5V 0.1 3V,3.5V,4V,4.5V,6V 0.05 0 1.5 1.0 0.5 0.0 0 0.5 1 1.5 2 0 1 2 VGS - Gate-to-Source Voltage (V) ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.6 TJ = 25°C ID = 1.2A 0.5 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 0.4 0.3 0.2 1 0.1 0.1 0 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 2 160 F = 1MHz 6V,4.5V,4V,3.5V,3V 1.5 120 Capacitance (pf) ID - Drain Current (A) 140 2.5V 2V 1 1.8V 0.5 100 Ciss 80 60 Coss 40 Crss 20 0 0 0 0.05 0.1 0.15 0.2 0.25 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE Typical Electrical Characteristics - N-channel 2 8 ID = 1.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = 10V 6 4 2 1.5 1 0.5 0 -50 0 1 2 3 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 15 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) -25 4 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 460°C /W 0.1 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE 0.4 2.0 0.3 1.5 TJ = 25°C ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 1.8V 2V 0.2 2.5V 3V,3.5V,4V,4.5V,6V 0.1 1.0 0.5 0.0 0 0 0.5 1 1.5 ID-Drain Current (A) 0 2 1 1. On-Resistance vs. Drain Current 3 2. Transfer Characteristics 10 0.8 TJ = 25°C ID = -0.8A TJ = 25°C 0.6 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.4 0.2 0 1 0.1 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 250 2 F = 1MHz 6V,4.5V,4V,3.5V,3V,2.5V Capacitance (pf) ID - Drain Current (A) 200 1.5 2V 1.8V 1 0.5 150 Ciss 100 Coss 50 Crss 0 0 0 0.1 0.2 0.3 0.4 0.5 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE Typical Electrical Characteristics - P-channel 8 2 ID = -0.8A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -10V 6 4 2 1.5 1 0 0.5 0 2 4 6 8 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 15 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 10 0 0.001 0.01 0.1 1 10 5 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 460°C /W 0.1 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM1523CE_1A Analog Power AM1523CE Package Information © Preliminary 7 Publication Order Number: DS_AM1523CE_1A