Analog Power AM3599CE N & P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 90 @ VGS = 10V 30 130 @ VGS = 4.5V 190 @ VGS = -10V -30 290 @ VGS = -4.5V ID (A) 3.0 2.5 -2.1 -1.7 Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 TA=25°C 3.0 -2.1 ID Continuous Drain Current a TA=70°C 2.3 -1.6 b IDM Pulsed Drain Current 10 -10 a I 1.4 -1.2 Continuous Source Current (Diode Conduction) S T =25°C 1.15 1.15 A PD Power Dissipation a TA=70°C 0.7 0.7 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 110 RθJA 150 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V IDSS VDS = -24 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -10 V VGS = 10 V, ID = 2 A VGS = 4.5 V, ID = 1.6 A rDS(on) VGS = -10 V, ID = -2 A VGS = -4.5 V, ID = -1.6 A VDS = 15 V, ID = 2 A gfs VDS = -15 V, ID = -2 A IS = 0.7 A, VGS = 0 V VSD IS = -0.6 A, VGS = 0 V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min (Nch) (Pch) (Nch) (Pch) (Nch) (Pch) (Nch) (Nch) (Pch) (Pch) (Nch) (Pch) (Nch) (Pch) Dynamic b N - Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A N - Channel VDS = 15 V, RL = 7.5 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -15 V, VGS = -4.5 V, ID = -2 A P - Channel VDS = -15 V, RL = 7.5 Ω, ID = -2 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Typ Max 1 -1 ±10 1 -1 4 -2.5 Unit V V uA uA A A 90 130 190 290 4 3 0.79 -0.87 1.4 0.4 0.6 3 5 13 4 103 21 17 2.2 0.7 0.8 5 7 12 5 128 22 17 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Typical Electrical Characteristics - N-channel 0.3 4 3V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.25 0.2 3.5V 0.15 0.1 3 2 1 4V,4.5V,6V,8V,10V 0.05 0 0 0 1 2 3 ID-Drain Current (A) 0 4 1 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.5 TJ = 25°C ID = 2A TJ = 25°C 0.4 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.3 0.2 0.1 0 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 4 200 F = 1MHz 10V,8V,6V, 4.5V,4V 3 150 Capacitance (pf) ID - Drain Current (A) 1.4 VSD - Source-to-Drain Voltage (V) 3.5V 2 3V Ciss 100 1 50 0 0 Coss Crss 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Typical Electrical Characteristics - N-channel 2 VDS = 15V ID = 2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 1 2 3 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 15 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 12 9 6 3 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 150 °C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Typical Electrical Characteristics - P-channel 2 TJ = 25°C 0.4 3.5V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.5 4V 0.3 0.2 4.5V,6V,8V,10V 1.5 1 0.5 0.1 0 0 0 0.5 1 1.5 ID-Drain Current (A) 0 2 1 1. On-Resistance vs. Drain Current 4 5 1 TJ = 25°C ID = -2A TJ = 25°C 0.8 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 1 0.6 0.4 0.2 0 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 200 2 F = 1MHz 180 10V,8V,6V,4.5V,4V 160 1.5 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3.5V 1 0.5 Ciss 140 120 100 80 60 Coss 40 20 0 Crss 0 0 0.2 0.4 0.6 0.8 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Typical Electrical Characteristics - P-channel 2 VDS = -15V ID = -2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 1 2 3 4 -50 5 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 15 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 12 9 6 3 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 RθJA = 150 °C /W 0.1 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM3599CE_1A Analog Power AM3599CE Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM3599CE_1A