Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF3N30Z
Power MOSFET
3A, 300V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
The UTC UF3N30Z is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers
with a minimum on-state resistance, low gate charge and superior
switching performance.


TO-251S
1
TO-252
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3N30ZL-TM3-T
UF3N30ZG-TM3-T
UF3N30ZL-TMS-T
UF3N30ZG-TMS-T
UF3N30ZL-TN3-R
UF3N30ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

1
FEATURES
* RDS(ON) < 2Ω @ VGS=10V, ID=1.5A
* High switching speed
* Typically 4nC low gate charge
* 100% avalanche tested

TO-251
Package
TO-251
TO-251S
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UF3N30Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
300
V
VGSS
±20
V
Continuous
ID
3
A
Continuous Drain Current
Pulsed
IDM
12
A
Avalanche Energy
EAS
52
mJ
Power Dissipation (TC=25°C)
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=300V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω,
Rise Time
tR
V
Turn-OFF Delay Time
tD(OFF)
GS=0~10V
Fall-Time
tF
Total Gate Charge
QG
VDD=50V, ID=1.3A, IG=100µA,
Gate to Source Charge
QGS
VGS=10V
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=0.85A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
300
2
1
10
-10
V
µA
µA
µA
4
2
V
Ω
200
90
30
pF
pF
pF
10
50
30
40
4
0.64
1.6
ns
ns
ns
ns
nC
nC
nC
3
12
1.3
A
A
V
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
200
150
100
50
50
0
0
0
0.7
2.1 2.8
1.4
3.5 4.2
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
70
210
280 350
140
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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