Datasheet

AOL1700
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
SRFET TM AOL1700 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
VDS (V) = 30V
ID =85A (VGS = 10V)
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 6.0mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested!
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
H
C
Units
V
±20
V
ID
81
IDM
200
TA=25°C
Continuous Drain
Current A
Maximum
30
85
TC=100°C
Pulsed Drain Current
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
A
17
IDSM
TA=70°C
A
13
Avalanche Current C
IAR
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Case D
2.1
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.3
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
50
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
100
PD
TC=100°C
RθJA
RθJC
Typ
19.6
50
1
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
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AOL1700
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=1mA, VGS=0V
Typ
30
0.1
TJ=125°C
20
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
VGS=10V, ID=20A
0.1
µA
2.2
V
3.4
4.2
5.2
6.5
6.0
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
4.8
gFS
Forward Transconductance
VDS=5V, ID=20A
90
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Diode Continuous Current H
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.36
3760
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
0.5
V
85
A
4512
pF
682
pF
314
VGS=0V, VDS=0V, f=1MHz
mA
1.5
RDS(ON)
TJ=125°C
Units
V
VDS=30V, VGS=0V
IGSS
Coss
Max
pF
0.75
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
62
74
nC
Qg(4.5V) Total Gate Charge
29
35
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
12
nC
Qgd
Gate Drain Charge
12
nC
tD(on)
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
8.5
ns
34
ns
9
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=300A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
22
27
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM
are based on T J(MAX)=150°C, using steady-state junction-to-ambient thermal resistance.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
10V
30
5V
VDS=5V
175
7V
6V
150
25
4.5V
4.0V
20
ID(A)
ID (A)
125
100
3.5V
125°
15
75
25°C
10
50
VGS=3.0V
25
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
7
Normalized On-Resistance
2
6
RDS(ON) (mΩ )
2
VGS=4.5V
5
4
3
VGS=10V
2
ID=20A
1.8
VGS=10V
1.6
VGS=4.5V
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
210
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
8
1.0E+02
ID=20A
1.0E+01
125°C
1.0E+00
125°C
6
IS (A)
RDS(ON) (mΩ )
7
5
4
1.0E-01
25°C
1.0E-02
1.0E-03
3
25°C
1.0E-04
2
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6.00E-09
10
5.00E-09
VDS=15V
ID=20A
6
Capacitance (nF)
VGS (Volts)
8
4
2
3.00E-09
2.00E-09
Coss
Crss
1.00E-09
0
0.00E+00
0
10
20
30
40
50
60
70
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
10.0
DC
10ms
100ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
180
100µ
1ms
RDS(ON)
limited
Power (W)
100.0
ID (Amps)
Ciss
4.00E-09
TJ(Max)=175°C
TC=25°C
160
140
120
100
0.0
80
0.01
0.1
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOL1700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TC=25°C
100
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
TC=150°C
60
40
20
0
1.0E-07
1.0E-06
1.0E-05
1.0E-04
110
100
90
80
70
60
50
40
30
20
10
0
0
1.0E-03
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
100
100
80
TJ(Max)=150°C
TA=25°C
80
60
Power (W)
Current rating ID(A)
25
40
20
60
40
20
0
0
0
25
50
75
100
125
150
175
0.001
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AOL1700
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
BVDSS
AR
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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