Datasheet

AOL1404
20V N-Channel MOSFET
General Description
Product Summary
The AOL1404 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
RDS(ON) (at VGS=4.5V)
20V
45A
< 4mΩ
RDS(ON) (at VGS = 2.5V)
< 5.6mΩ
ID (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
UltraSO-8TM
Bottom View
D
G
S
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
C
Avalanche Current C
Avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Jan 2010
IAS, IAR
57
A
EAS, EAR
162
mJ
60
Steady-State
Steady-State
W
30
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
18
PD
TC=100°C
A
160
IDSM
TA=70°C
V
35
IDM
TA=25°C
Continuous Drain
Current
Units
V
45
ID
TC=100°C
Pulsed Drain Current
Maximum
20
±12
-55 to 175
Typ
20
50
1.8
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°C
Max
25
60
2.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOL1404
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=20V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
0.5
VGS=10V, VDS=5V
160
VGS=4.5V, ID=20A
TJ=125°C
VGS=2.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=20A
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
20
VGS(th)
ID(ON)
RDS(ON)
Typ
µA
100
nA
1
1.6
V
3.3
4
4.6
5.6
4.5
5.6
mΩ
1
V
45
A
A
50
0.7
mΩ
S
3080
3860
4630
pF
520
740
960
pF
350
580
810
pF
0.6
1.4
2.1
Ω
28
36
43
nC
7
9
11
nC
7
12
17
nC
7
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
ns
8
ns
70
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
17
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29
36
43
18
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2010
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Page 2 of 6
AOL1404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
4.5V
VDS=5V
2.5V
2V
60
60
ID(A)
ID (A)
80
40
40
125°C
20
VGS=1.5V
0
0
0
1
2
3
4
5
0.5
8
1.5
2
2.5
Normalized On-Resistance
1.8
6
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
4
VGS=4.5V
2
VGS=4.5V
ID=20A
1.6
1.4
17
5
VGS=2.5V
ID=20A 2
1.2
10
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
10
ID=20A
9
1.0E+01
8
40
1.0E+00
7
IS (A)
RDS(ON) (mΩ)
25°C
20
6
5
125°C
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
2
25°C
1
0
2
4
6
1.0E-05
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOL1404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
7000
VDS=10V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
4
3
2
1
3000
Coss
2000
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
40
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
200
1000.0
10µs 10µs
RDS(ON)
limited
160
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=2.5°C/W
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=175°C
TC=25°C
100µs
Power (W)
100.0
ID (Amps)
4000
1000
0
ZθJC Normalized Transient
Thermal Resistance
Ciss
5000
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2010
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Page 4 of 6
AOL1404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
50
40
30
20
10
TA=125°C
0
10
0
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
60
100
50
80
40
30
20
50
75
100
125
150
175
TA=25°C
17
5
2
10
60
40
20
10
0
0.0001
0
0
25
50
75
100
125
150
175
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
1
100
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note F)
Power (W)
Current rating ID(A)
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2010
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Page 5 of 6
AOL1404
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Jan 2010
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6