Datasheet

AON4420L
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
RDS(ON) per unit area. This device is ideal for load switch
and high speed switching applications.
VDS (V) = 30V
ID = 10A
(VGS = 10V)
RDS(ON) < 19mΩ
(VGS = 10V)
RDS(ON) < 25mΩ
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
DFN 3x2
Top View
D
Bottom View
Pin 1
D
D
D
D
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Pulsed Drain Current
C
IDM
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
W
1
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
1.6
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
B
Maximum Junction-to-Lead
V
8
ID
TA=25°C
Power Dissipation
±20
10
TA=70°C
A
Units
V
50
TA=25°C
Continuous Drain
Current A
Maximum
30
RθJA
RθJL
Typ
34
66
20
°C
Max
40
80
25
Units
°C/W
°C/W
°C/W
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AON4420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±20V
1
5
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.4
On state drain current
VGS = 10V, VDS = 5V
50
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS = 1A,VGS = 0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS = 10V, ID = 10A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
21
30
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
±100
nA
2.5
V
20
27
VDS = 5V, ID = 10A
VGS=0V, VDS=15V, f=1MHz
µA
A
VGS = 4.5V, ID = 8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
1.9
16
TJ=125°C
Units
V
TJ = 55°C
ID(ON)
Coss
Max
30
VDS = 30V, VGS = 0V
IDSS
IS
Typ
0.75
mΩ
26
S
1
V
3
A
440
550
660
pF
80
110
140
pF
35
55
80
pF
2
4
6
Ω
8
9.8
12
nC
4
4.6
5.5
nC
1.5
1.8
2.2
nC
1.3
2.2
3
nC
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
5
ns
3.2
ns
24
ns
6
ns
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=300A/µs
8
11
14
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=300A/µs
11
13
16
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
4.5V
VDS=5V
4V
40
40
3.5V
125°C
30
ID(A)
ID (A)
30
20
20
25°C
VGS=3V
10
10
0
0
0
1
2
3
4
5
0
VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
VGS=4.5V
20
15
VGS=10V
10
0
2
4
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics
30
VGS=10V
ID=10A
1.6
VGS=4.5V
ID=8A
1.4
1.2
1.0
0.8
IF6=-6.5A, 8dI/dt=100A/µs
10
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
50
100
150
200
1E+02
1E+01
ID=10A
1E+00
1E-01
IS (A)
50
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
RDS(ON) (mΩ)
1
125°C
1E-02
125°C
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
25°C
OUT OF 20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS=15V
ID=10A
6
4
Ciss
600
Capacitance (pF)
VGS (Volts)
8
400
Coss
200
2
0
Crss
0
0
2
4
6
8
10
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
25
30
100µs
1ms
10ms
100ms
0.1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
20
1000
1
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
1
0.00001
IF=-6.5A,
dI/dt=100A/µs
10
100
1
100
10s
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
T
SingleNOTICE.
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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AON4420L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgd
Qgs
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
Vgs
10%
Vgs
td(on)
tr
td(off)
ton
tf
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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