AOSMD AO4488

AO4488
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4488/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ESD protected and it is suitable for use as
a load switch or in PWM applications. AO4488 and
AO4488L are electrically identical.
-RoHS Compliant
-AO4488L is Halogen Free
VDS (V) = 30V
(VGS = 10V)
ID = 20A
RDS(ON) < 4.6mΩ (VGS = 10V)
RDS(ON) < 6.4mΩ (VGS = 4.5V)
S
D
S
D
S
D
G
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
VDS
Drain-Source Voltage
30
VGS
±20
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
ID
IDM
B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
17
12
IAR
50
EAR
375
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
15
80
PD
TA=70°C
20
RθJA
RθJL
V
A
mJ
3.1
1.7
2.0
1.1
-55 to 150
Typ
31
59
16
Units
V
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4488
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
1
TJ = 55°C
5
Gate-Body leakage current
VDS = 0V, VGS = ±16V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.0
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
80
TJ=125°C
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4.6
6.4
VDS = 5V, ID = 20A
72
0.69
5450
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
V
A
6.5
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
3.8
5.2
IS = 1A,VGS = 0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Coss
3
5.3
VSD
IS
1.7
VGS = 4.5V, ID = 18A
Forward Transconductance
µA
±10
VGS = 10V, ID = 20A
gFS
Units
V
VDS = 30V, VGS = 0V
Static Drain-Source On-Resistance
Max
30
IGSS
RDS(ON)
Typ
mΩ
S
1
V
3
A
6800
pF
760
pF
540
pF
1
1.5
Ω
84
112
nC
42
56
nC
12
nC
Gate Drain Charge
21
nC
Turn-On DelayTime
13
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
9.8
ns
49
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
42
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
31
16
ns
56
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
0
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev1: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
80
10V
70
4V
60
3.5V
125°C
20
ID(A)
50
ID (A)
VDS= 5V
25
4.5V
40
30
15
25°C
10
20
3V
10
5
-40°C
VGS= 2.5V
0
0
0
1
2
3
4
5
0
1
6
VGS= 4.5V
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
1.6
5.5
5
4.5
VGS= 10V
4
3.5
3
0
4
1.2
VGS= 4.5V
ID= 18A
1.0
0.8
0.6
16
20
IF12
=-6.5A, dI/dt=100A/µs
8
VGS= 10V
ID= 20A
1.4
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
1E+01
14
ID= 20A
1E+00
12
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
1E-01
10
IS (A)
125°C
1E-02
8
25°C
125°CAND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
THIS PRODUCT HAS BEEN DESIGNED
1E-03
6
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF4SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
THE RIGHT 25°C
TO IMPROVE PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
-40°C
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
-40°C
1E-05
10
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AO4488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10
VDS= 15V
ID= 20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
4000
Coss
2
2000
0
0
0
10
20
30
40
50
60
70
80
90
10
15
20
25
30
1000
100µs
1ms
1
10ms
100ms
0.1
0.1
1
10
DC
1
1E-04 0.001 0.01
I =-6.5A,
dI/dt=100A/µs
10
100
F
1
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=59°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10s
TJ(Max)=150°C
TA=25°C
0.01
0.01
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
5
VDS (Volts)
Figure 8: Capacitance Characteristics
100
ZθJA Normalized Transient
Thermal Resistance
Crss
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
Ciss
6000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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