AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (meets ROHS & Sony 259 specifications). VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) D1/D2 S1 S1 G1 8 7 6 5 1 2 3 4 D2 D1 TSSOP-8 Top View D1/D2 S2 S2 G2 1.8KΩ G1 1.8KΩ G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A TA=25°C ID IDM TA=70°C B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TJ, TSTG Symbol A A t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. ±8 V 7 5.7 5.7 4.8 A 25 PD TA=70°C 20 Units V Steady State RθJA RθJL 1.5 1.0 1.0 0.7 -55 to 150 Typ 64 89 53 Max 83 120 70 W °C Units °C/W °C/W °C/W www.aosmd.com AO8846 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C VDS = 0V, VGS = ±8V Gate Threshold Voltage VDS = VGS ID = 250µA 0.5 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 25 VGS = 4.5V, ID = 7.0A 12 TJ=125°C Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V 16 20 A 22 28 20 VGS = 3.1V, ID = 6.5A 13 17 21 VGS = 2.5V, ID = 6.5A 14 18 22 VGS = 1.8V, ID = 6.0A 15 21 27 VDS = 4.5V, ID = 7.0A mΩ 34 0.62 1295 S 1 V 1.5 A 1650 pF VGS=0V, VDS=10V, f=1MHz 160 pF 87 VGS=0V, VDS=0V, f=1MHz 1.8 pF kΩ VGS= 4.5V, VDS= 10V, ID= 7A 4.2 nC 2.6 nC 10 Gate Drain Charge tD(on) 1 16.2 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 0.7 12 IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current Coss µA 16 VSD IS ±10 VGS = 4.0V, ID = 7.0A Forward Transconductance µA 5 Gate-Body leakage current gFS Units V VDS = 20V, VGS = 0V IGSS Static Drain-Source On-Resistance Max 20 VGS(th) RDS(ON) Typ VGS=4.5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 13 nC 6.4 ns 12.4 ns 42 ns 15 trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs, VGS=-9V 31 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs, VGS=-9V 6.8 ns 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0 August 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8846 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 4.5V 20 VDS= 5V 20 3.1V 2.5V 1.8V VGS=1.5V 15 ID(A) ID (A) 15 10 10 5 5 0 125°C 25°C 0 0 0.5 1 1.5 2 2.5 3 0 23 0.8 1.2 21 19 VGS= 2.5V VGS= 3.1V 17 VGS= 4.0V Normalized On-Resistance 1.5 VGS= 1.8V RDS(ON) (mΩ) 0.4 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics VGS= 2.5V ID= 6.5A VGS= 1.8V ID= 6A 1.3 VGS= 4.5V ID= 7A 1.1 0.9 VGS= 4.5V 15 0 2 4 0.7 I6F=-6.5A, 8dI/dt=100A/µs 10 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1E+01 ID= 7.0A 1E+00 45 IS (A) 1E-01 35 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 55 RDS(ON) (mΩ) -40°C 125°C 1E-02 1E-03 125°C 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 1E-04 25°C OUT OF15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, -40°C 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. -40°C 1E-06 5 0.0 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 6 7 8 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8846 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 5 1600 VDS= 10V ID= 7A Ciss 1400 Capacitance (pF) VGS (Volts) 4 3 2 1200 1000 800 600 400 1 Crss Coss 200 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100 10µs 10 TJ(Max)=150°C TA=25°C 1000 100µs 1ms RDS(ON) limited 1 0.1 10ms 100ms 10s TJ(Max)=150°C TA=25°C DC 0.01 0.1 IF=-6.5A, dI/dt=100A/µs 10 100 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) ID (Amps) 5 100 10 1 0.1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=120°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton 0.01 FUNCTIONS AND RELIABILITY WITHOUT T SingleNOTICE. Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 (s) 1 10 Pulse Width Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com