KSMP6875 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Description This P-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS -20V RDSON ID 0.03Ω -6A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -6 Continuous Drain Current-T=100℃ -20 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 2 TJ, TSTG Operating and Storage Junction Temperature -55 to ID Range 150 A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMP6875 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 78 RƟJA Thermal Resistance, Junction to Ambient1 40 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMP6875 KSMP6875 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -20 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -0.4 -0.8 -1.5 V VDS=10V,ID=6A — 0.024 0.03 VDS=2.5V,ID=5A — 0.033 0.04 VDS=5V,ID=12A — — — — 2250 — — 500 — — 200 — — 8 16 — 15 27 — 98 135 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time — 35 55 Qg Total Gate Charge — 23 31 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.9 — Gate-Drain “Miller” Charge ID=6A — 5.5 — ns ns ns ns nC nC nC — -0.7 -1.2 V — — — ns — — — nC Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMP6875 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation with with Temperature . Figure 2. On-Resistance Variation with Dain Current and Gate Voltage. Figure 4. On-Resistance Variation Gate-to-Source Voltage www.kersemi.com 3 KSMP6875 KERSMI ELECTRONIC CO.,LTD. -20V P-channel MOSFET Figure 5. Transfer Characteristics Figure 7. Gate Charge Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 8. Maximum Safe Operating Area. Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4