KSMN8313 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON ID 15.5M Ω 30V 9.7A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 9.7 Continuous Drain Current-T=100℃ 8.1 Pulsed Drain Current2 81 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 2.0 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN8313 KERSMI ELECTRONIC CO.,LTD. 30V Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 N-channel MOSFET Ratings Units 42 ℃/W 62.5 Package Marking and Ordering Information Part NO. Marking Package KSMN8313 KSMN8313 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 1.35 1.8 2.35 V VDS=10V,ID=6A — 12. 15.5 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance 5 Ω VDS=2.5V,ID=5A — 18. 6 21.6 --- VDS=5V,ID=12A 23 — — S — 760 — — 172 — — 87 — — 8.3 — — 9.9 — — 8.5 — Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 4.2 — Qg Total Gate Charge — 6.0 9.0 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 1.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 0.7 — ns ns ns ns nC nC nC — — 1.0 V — 20 30 ns — 10 15 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMN8313 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com 3 KSMN8313 KERSMI ELECTRONIC CO.,LTD. 30V Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage N-channel MOSFET Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4