Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2035Z
Power MOSFET
-3.6A, -20V P-CHANNEL
ENHANCEMENT MODE
MOSFET
3

DESCRIPTION
The UTC UT2035Z is a P-channel enhancement mode MOSFET,
it uses UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
charge, etc.

2
1
SOT-23
(EIAJ SC-59)
FEATURES
*RDS(ON)<42mΩ @VGS=-4.5V, ID=-4.0A
RDS(ON)<65mΩ @VGS=-2.5V, ID=-4.0A
RDS(ON)<82mΩ @VGS=-1.8V, ID=-2.0A
* High switching speed
* Low gate charge
* Low gate threshold voltage
* Low input capacitance
* Low input/output leakage

SYMBOL

OR DERING INFORMATION
Ordering Number
Note:
UT2035ZG-AE3-R
Pin Assignment: S: Source
G: Gate
UT2035ZG-AE3-R

Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
D: Drain
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
3
235ZG
2
1
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-937.D
UT2035Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
-20
V
±8
V
Steady, TA=25°C
-3.6
A
Continuous (Note 2)
ID
Drain Current
State, TA=70°C
-2.9
A
-24
A
Pulsed (Note 3)
IDM
Power Dissipation (Note 2)
PD
0.81
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t≤10s.
3. Repetitive rating, pulse width limited by junction temperature.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
θJA
Junction to Ambient

RATINGS
153.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source
Forward
Leakage Current Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-20
-1.0
+10
-10
V
µA
µA
µA
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-4.0A
VGS=-1.8V, ID=-2.0A
VDS=-5V, ID=-4A
VGS=0V, IS=-1A
-0.4 -0.7 -1.0
30
42
50
65
61
82
14
-0.7 -1.0
V
mΩ
mΩ
mΩ
S
V
1610
157
145
pF
pF
pF
15.4
2.5
3.3
9.45
16.8
12.4
94.1
42.4
nC
nC
nC
Ω
ns
ns
ns
ns
Forward Transfer Admittance
|YFS|
Diode Forward Voltage
VSD
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-10V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-4A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Gate Resistance
RG
VDS=0V, VGS=0V, f=1MHz
Turn-ON Delay Time
tD(ON)
VDS=-10V, VGS=-4.5V,ID=-1A,
Rise Time
tR
RG=6.0Ω, RL=10Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Note: Short duration pulse test used to minimize self-heating effect.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
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QW-R502-937.D
UT2035Z
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current, -ID (µA)
300
Drain Current vs. Gate Threshold Voltage
300
Drain Current, -ID (µA)
250
200
150
100
50
200
150
100
50
0
0
0
0
5
15
20
25
10
Drain-Source Breakdown Voltage, -BVDSS (V)
Drain-Source On-State Resistance
Characteristics
7.0
1.4
6.0
1.2
5.0
VGS=-4.5V, ID=-4A
4.0
3.0
VGS=-2.5V, ID=-4A
2.0
VGS=-1.8V, ID=-2A
1.0
1.0
0.8
0.6
0.4
0.2
0
0
0
0
50
100
150
200 250
Drain to Source Voltage, -VDS (mV)
Li
m
it
300μs
R
D
S(
O
N
)
10
1ms
1
10ms
100ms
0.1
TA=25
0.01
0.01
1
0.1
10
Drain-Source Voltage,VDS (V)
1s
DC
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Normalized Transient Thermal Resistance
Safe Operation Area
50
Drain Current,ID (A)
0.2
0.4 0.6 0.8
1.0 1.2
Gate Threshold Voltage, -VTH (V)
Drain Current vs. Source to Drain Voltage
Drain Current, -ID (A)
Drain Current, -ID (A)
250
2
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, -VSD (V)
Thermal Transient Impedance
1
Duty=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Mounted on 1in 2 pad
RθJA: 150 /W
1E-3
1E-4 1E-3 0.01 0.1
1
10
100
Square Wave Pulse Duration (sec)
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QW-R502-937.D
UT2035Z
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain Current, -ID (A)
Drain Current, -ID (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-937.D
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