ACE3422B N-Channel Enhancement Mode Field Effect Transistor Description The ACE3422B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V)=60V ID=2.6A RDS(ON)=82mΩ (typ.) @VGS=10V RDS(ON)=96mΩ (typ.) @VGS=4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC O TA=70 C Drain Current (Pulse) ID IDM O Power Dissipation TA=25 C TA=70 OC PD 2.6 2.1 10 1 0.7 Operating Temperature / Storage Temperature TJ/TSTG -55/150 A A W O C Packaging Type SOT-23-3 Ordering information ACE3422B XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.3 1 ACE3422B N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 60 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current V 3.0 VGS=10V, ID=2.6A 82 100 VGS=4.5V, ID=2.8A 96 130 gfs* VDS=5V,ID=2.6A 15 VSD VGS=0V, ISD=1A 0.8 IS mΩ S 1.2 V 2.5 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=30V, VGS=4.5V, ID=2.6A 6.5 2.2 nC 2.7 10 VGS=10V, VDS=20V, RL=20Ω, RGEN=1Ω, 11 ns 29 3 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VDS=30V, VGS=0V f=1MHz VGS=0V, VDS=0V, f=1MHz 350 40 pF 12 1.4 2 Ω Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤10s thermal resistance rating. VER 1.3 2 ACE3422B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.3 3 ACE3422B N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.3 4 ACE3422B N-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-23-3 Unit: mm VER 1.3 5 ACE3422B N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 6