elm17408ga

Single N-channel MOSFET
ELM17408GA-S
■General description
■Features
ELM17408GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V.
•
•
•
•
•
Vds=20V
Id=2.2A (Vgs=4.5V)
Rds(on) < 82mΩ (Vgs=4.5V)
Rds(on) < 95mΩ (Vgs=2.5V)
Rds(on) < 120mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
20
V
Gate-source voltage
Vgs
±8
V
Ta=25°C
Continuous drain current
2.20
Id
Ta=70°C
Pulsed drain current
1.75
10
0.625
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
0.400
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
160
180
200
220
°C/W
°C/W
1
Maximum junction-to-lead
Steady-state
Rθjl
130
160
°C/W
3
■Pin configuration
■Circuit
D
SC-70-6(TOP VIEW)
6
1
5
2
4
3
Pin No.
Pin name
1
2
3
DRAIN
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4-1
G
S
Single N-channel MOSFET
ELM17408GA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
0.6
0.8
V
A
67
82
99
125
Vgs=2.5V, Id=2A
Vgs=1.8V, Id=1A
78
96
95
120
mΩ
mΩ
Vds=5V, Id=1.6A
Is=1A, Vgs=0V
6.7
0.69
1.00
S
V
0.91
A
Vds=16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Vgs=4.5V, Id=2.2A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs
Vsd
Ciss
mΩ
499
pF
65
56
3
pF
pF
Ω
6.02
nC
0.41
1.35
nC
nC
td(on)
6.5
ns
tr
Vgs=5V, Vds=10V
td(off) RL=4.5Ω, Rgen=6Ω
8.0
61.0
ns
ns
16.0
23.2
8.6
ns
ns
nC
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=125°C
0.4
10
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
20
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=0V, Vds=10V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
tf
trr
Qrr
Vgs=4.5V, Vds=10V, Id=2.2A
If=2.2A, dlf/dt=100A/μs
If=2.2A, dlf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM17408GA-S
■Typical electrical and thermal characteristics
16
10
8V
Vds=5V
4.5V
8
25°C
3V
2.5V
8
6
4
4
Vgs=1.5V
2
0
0
0
1
2
3
4
5
0
0.5
140
1.5
1.8
Normalized On-Resistance
Rds(on) (m� )
1
2
2.5
3
Vgs(Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
120
Vgs=1.8V
100
Vgs=2.5V
80
Vgs=4.5V
60
Vgs=2.5V
Id=2.0A
Vgs=1.8V
1.6
Id=1.0A
1.4
Vgs=4.5V
Id=2.2A
1.2
1
0.8
0
2
4
6
8
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
180
1E+00
160
125°C
Id=2.2A
1E-01
140
120
Is (A)
Rds(on) (m� )
125°C
2V
Id(A)
Id (A)
12
125°C
1E-02
25°C
1E-03
100
25°C
80
1E-04
1E-05
60
1
2
3
4
5
6
7
0.0
8
0.2
0.4
0.6
0.8
1.0
1.2
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.4
Single N-channel MOSFET
ELM17408GA-S
1000
5
Vds=10V
Id=2.2A
800
Capacitance (pF)
Vgs (Volts)
4
3
2
Ciss
600
400
Coss
200
1
0
0
0
1
2
3
4
5
6
0
7
10.0
Tj(max)=150°C
Ta=25°C
15
20
Tj(max)=150°C
Ta=25°C
12
Rds(on)
limited
10�s
10ms 1ms
0.1s
1.0
8
4
1s
0.1
0.1
10s
DC
1
10
0
0.001
100
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
10
16
100�s
Power (W)
100.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
Id (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
Pd
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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