Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF740-E
Power MOSFET
10A, 400V, 0.55Ω N-CHANNEL
POWER MOSFET
1

TO-220F
TO-220
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.

1
1
1
TO-220F1
TO-220F2
FEATURES
* 10A, 400V, RDS(ON)(0.55Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF740L-TA3-T
UF740G-TA3-T
UF740L-TF1-T
UF740G-TF1-T
UF740L-TF2-T
UF740G-TF2-T
UF740L-TF3-T
UF740G-TF3-T
UF740L-TQ2-T
UF740G-TQ2-T
UF740L-TQ2-R
UF740G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
1
TO-263
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-966. A
UF740-E

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified)
PARAMETER
SYMBOL
RATINGS
Drain to Source Voltage (TJ =25°C~125°C)
VDS
400
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C)
VDGR
400
Gate to Source Voltage
VGS
±20
Continuous
ID
10
Drain Current
TC = 100°C
ID
6.3
Pulsed
IDM
40
Avalanche Energy
Single Pulsed (Note 3)
EAS
520
125
TO-220/TO-263
Power Dissipation
TO-220F/TO-220F1
44
TO-220F2
46
PD
TO-220/TO-263
1.0
Derating above 25°C
TO-220F/TO-220F1
0.35
TO-220F2
0.37
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT
V
V
V
A
A
A
mJ
W
W/°C
°C
°C
°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
2.86
2.72
UNIT
°C/W
°C/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0V, ID = 250μA
VGS(THR) VGS = VDS, ID = 250μA
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V
VDS = Rated BVDSS, VGS = 0V
IDSS
VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C
IGSS
VGS = ±20V
RDS(ON) VGS = 10V, ID = 5.2A (Note 1)
gFS
VDS ≥ 50V, ID = 5.2A (Note 1)
tDLY(ON) VDD = 200V, ID ≈ 10A,
tR
RGS = 9.1Ω, RL = 20Ω, VGS = 10V
tDLY(OFF) MOSFET Switching Times are Essentially
Independent of Operating Temperature
tF
QG(TOT)
QGS
QGD
CISS
COSS
CRSS
MIN TYP MAX UNIT
400
V
2.0
4.0
V
10
A
25
μA
250 μA
±500 nA
0.47 0.55 Ω
5.8 8.9
S
45
55
ns
65
75
ns
150 180 ns
70
85
ns
VGS = 10V, ID = 10A, IG(REF) = 1.5mA,
VDS = 0.8 x Rated BVDSS
Gate Charge is Essentially Independent of
Operating Temperature
100
VGS = 0V, VDS =25V, f = 1.0MHz
Modified MOSFET
Measured From
the Contact Screw Symbol Showing the
on Tab to Center Internal Devices
Inductances
of Die
Internal Drain Inductance
LD
Measured From
the Drain Lead,
6mm (0.25in)
From Package to
Center of Die
Measured From
the Source Lead,
6mm (0.25in)
Internal Source Inductance
LS
From Header to
Source Bonding
Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
VSD
TJ = 25°C, ISD = 10A, VGS = 0V (Note 1)
Continuous Source to Drain Current
IS
Modified MOSFET
Symbol Showing
the Integral
Pulse Source to Drain Current
Reverse P-N
ISM
(Note 2)
Junction Diode
Reverse Recovery Time
trr
TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR
TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
170
1.6
120
nC
10
20
1225
300
80
nC
nC
pF
pF
pF
3.5
nH
4.5
nH
7.5
nH
390
4.5
2.0
10
V
A
40
A
790
8.2
ns
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RL
10%
0
RG
VDD
D.U.T.
VGS
90%
90%
VGS
50%
10%
0
tD(ON)
tR
50%
PULSE WIDTH
tD(OFF) tF
tON
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tOFF
Resistive Switching Waveforms
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Drain Current, ID (A)
TYPICAL PERFORMANCE CUVES
Drain Current, ID (A)

Power MOSFET
Saturation Characteristics
Drain Current, ID (A)
DUTY CYCLE = 0.5% MAX
VGS=10V
12
100
VGS=6.0V
VGS=5.5V
9
VGS=5.0V
6
VGS=4.5V
3
VGS=4.0V
0
0
2
4
6
8
10
Drain to Source Current, IDS (ON) (A)
15 PULSE DURATION=80μS
Transfer Characteristics
10
0.1
TJ = 25℃
TJ = 150℃
1
0
2
4
6
8
10
Gate to Source Voltage, VSD (V)
Capacitance, C (pF)
Normalized Drain to Source
Breakdown Voltage
Drain to Source Voltage, VDS (V)
PULSE DURATION=80μS
DUTY CYCLE = 0.5% MAX
VDS≥50V
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UF740-E
Power MOSFET
Drain to Source on Resistance vs. Voltage and Drain
Current
5
4
20
Pulse Duration=80μs
Duty Cycle = 0.5% Max
3
VGS=10V
2
VGS=20V
1
0
25
10
20
Gate to Source Voltage vs. Gate Charge
Gate to Source Voltage, VGS (V)
Drain to Source on Resistance, RDS (ON) (Ω)
Transconductance, gFS (S)
Source to Drain Current, ISD (A)
TYPICAL PERFORMANCE CUVES (Cont.)

30
40
50
Drain Current, ID (A)
ID=10A
16
VDS=80V
12
VDS=200V
8
VDS=320V
4
0
0
12
36
24
Gate Charge, QG (nC)
48
60
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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