UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)=0.85Ω * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TQ2-R UF840G-TQ2-R UF840L-TQ2-T UF840G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube 1 of 8 QW-R502-047,F UF840 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C ~125°C) VDSS 500 V Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 500 V Gate to Source Voltage VGSS ±30 V 8.0 A Continuous ID Drain Current Pulsed IDM 32 A TO-220 134 TO-220F/TO-220F1 44 Power Dissipation (TC=25°C) PD W TO-220F2 46 TO-263 134 Single Pulse Avalanche Energy EAS 510 mJ Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 TO-220F2 TO-263 θJc RATINGS 62.5 0.93 2.86 2.72 0.93 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Current (Note 1) Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS ID = 250μA, VGS = 0V VGS(TH) VGS = VDS, ID = 250μA ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V IDSS VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C IGSS VGS = ±30V Gate-Source Leakage Current Static Drain-Source On-State RDS(ON) ID = 4.4A, VGS = 10V Resistance (Note 1) Turn-On Delay Time tDLY(ON) Turn-Off Delay Time tDLY(OFF) VDD=250V, ID ≈ 8A, RG = 9.1Ω, RL =30Ω (Note 2) Turn-On Rise Time tR Turn-Off Fall Time tF Total Gate Charge QG(TOT) VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS Gate-Source Charge QGS IG(REF) =1.5mA (Note 3) Gate-Drain Charge QGD Input Capacitance CISS Output Capacitance COSS VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance CRSS Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V 2 4 V 8 A 25 μA 250 µA ±100 nA 0.8 0.85 Ω 15 50 21 20 42 7 22 1225 200 85 21 74 35 30 63 ns ns ns ns nC nC nC pF pF pF 2 of 8 QW-R502-047,F UF840 Power MOSFET INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL DRAIN INDUCTANCE Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die SOURCE INDUCTANCE Measured from the source lead(6mm from header) to source bond pad LS Remark: Modified MOSFET symbol showing the internal devices inductances as below. MIN TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage(Note 1) VSD TJ = 25°C, ISD = 8.0A, VGS = 0V 2 V Continuous Source to Drain Current ISD 8 A Note 2 Pulse Source to Drain Current ISDM 32 A Reverse Recovery Time trr TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs 210 475 970 ns Reverse Recovery Charge QRR TJ = 25°C, ISD = 8.0A, dISD/dt = 100A/μs 2 4.6 8.2 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-047,F UF840 Power MOSFET TEST CIRCUITS AND WAVEFORMS Unclamped Energy Test Circuit Unclamped Energy Waveforms Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-047,F UF840 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 10% 50% 50% PULSE WIDTH Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-047,F UF840 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (A) Normalized Transient Thermal Impedance, ZθJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-047,F UF840 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Normalized Drain to Source on Resistance vs. Junction Temperature Pulse Duration=80µs Duty Cycle = 0.5% Max 2.4 VGS =10V, ID=4.4A 1.8 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature, TJ (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.25 Normalized Drain to Source on Breakdown Voltage Normalized Drain to Source on Resistance Voltage 3.0 ID=250µA 1.15 1.05 0.95 0.85 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature, TJ (°C) 7 of 8 QW-R502-047,F UF840 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Source to Drain DIODE Voltage Pulse Duration=80µs Duty Cycle = 0.5% Max Gate to Source Voltage, VGS (V) Source to Drain Current, ISD (A) Gate to Source Voltage vs. Gate Charge 20 100 10 TJ=150°C TJ=25°C 1.0 0.1 0 0.3 0.6 0.9 1.2 Source to Drain Voltage, VSD (V) 1.5 ID=8A 16 VDS=100V 12 VDS=250V VDS=400V 8 4 0 0 12 36 4 24 Gate Charge, QG (nC) 8 60 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-047,F