Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BSS139Z
Power MOSFET
0.2A, 50V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC BSS139Z is an N-Channel power MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low threshold voltage.
The UTC BSS139Z is suitable for battery-powered products,
power management in portable and DC to DC converters, etc.

FEATURES
* RDS(ON) < 5.6Ω @ VGS=5V, ID=200mA
* High switching speed
* Low threshold voltage (Min.=0.5V, Max.=1.5V)

SYMBOL
3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

BSS139ZG-AE2-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
1
S
Pin Assignment
2
3
G
D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-862.C
BSS139Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
200
mA
Drain Current
Pulsed
tp≤10µs
IDM
800
mA
Power Dissipation
PD
225
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=25V, VGS=0V
VDS=50V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
50
VDS=VGS, ID=1.0mA
VGS=2.75V, ID=200mA
VGS=5.0V, ID=200mA
0.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.2A
Turn-OFF Delay Time
tD(OFF)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
0.1
0.5
+10
-10
V
µA
µA
µA
µA
5.6
1.5
10
3.5
V
Ω
Ω
40
12
3.5
50
25
5.0
pF
pF
pF
20
20
ns
ns
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QW-R502-862.C
BSS139Z
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
1.2
250
1.0
200
0.8
150
0.6
100
0.4
50
0.2
0
0
14
28
42
56
0
0
70
0.6
0.9
1.2
1.5
1.8
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain Current, ID (A)
Drain Current, ID (A)
0.3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-862.C
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