UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640V suitable for resonant and PWM converter topologies. FEATURES * RDS(ON) =0.18Ω@VGS = 10V. * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640VL-T3P-T UF640VG-T3P-T UF640VL-TA3-T UF640VG-TA3-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-3P TO-220 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 5 QW-R502-916, A UF640V Power MOSFET ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS=20kΩ) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 18 A Pulsed Drain Current (Note 2) IDM 72 A Single Pulse Avalanche Energy Rating (Note 2) EAS 580 mJ TO-3P 150 W Maximum Power Dissipation PD TO-220 123 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C. 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-3P TO-220 TO-3P TO-220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 50 62.5 0.833 1.01 UNIT °C/W °C/W 2 of 5 QW-R502-916, A UF640V Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS ID=250μA, VGS=0V VDS = Rated BVDSS, VGS = 0V VGS= ±20V 200 VGS(TH) RDS(ON) VGS=VDS, ID=250μA ID=10A, VGS=10V 1.0 CISS COSS CRSS tD(ON) tR tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge Gate Source Charge QG(TOT) QGS Gate Drain Charge QGD TYP 0.14 VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA ISM UNIT 25 ±100 V μA nA 2.5 0.18 V Ω 1275 400 100 VDS=25V, VGS=0V, f=1MHz pF pF pF 13 50 46 21 77 68 ns ns ns 35 54 ns 43 8 64 nC nC 22 SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) VSD TJ=25°C, IS=18A, VGS=0V, Integral Reverse p-n Junction Continuous Source Current IS Diode in the MOSFET (body diode) Drain Pulse Source Current (body diode) (Note) MAX Gate nC 2.0 V 18 A 72 A 530 5.6 ns μC Sourse Reverse Recovery Time trr TJ=25°C, IS=18A, dIS/dt=100A/μs Reverse Recovery Charge QRR TJ=25°C, IS=18A, dIS/dt=100A/μs Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 120 1.3 240 2.8 3 of 5 QW-R502-916, A UF640V Power MOSFET TEST CIRCUIT VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 4 of 5 QW-R502-916, A UF640V Power MOSFET TYPICAL CHARACTERISTICS Saturation Characteristics 30 Pulse Duration = 80µs Duty Cycle = 0.5% MAX 24 18 VGS=6V Drain to Source On Resistance vs. Gate Voltage And Drain Current 1.5 Pulse Duration = 80µs Duty Cycle = 0.5% Max 1.2 0.8 12 0.6 6 0.3 VGS=10V 0 0 3.0 4.0 1.0 2.0 5.0 Drain to Source Voltage, VDS (V) 0 0 45 60 15 30 Drain Current, ID (A) 75 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-916, A