Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF640V
Power MOSFET
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
„
DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640V suitable for resonant and PWM converter
topologies.
„
FEATURES
* RDS(ON) [email protected] = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640VL-T3P-T
UF640VG-T3P-T
UF640VL-TA3-T
UF640VG-TA3-T
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-3P
TO-220
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
1 of 5
QW-R502-916, A
UF640V
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Drain-Gate Voltage (RGS=20kΩ)
VDGR
200
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current (Note 2)
IDM
72
A
Single Pulse Avalanche Energy Rating (Note 2)
EAS
580
mJ
TO-3P
150
W
Maximum Power Dissipation
PD
TO-220
123
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C.
3. Pulse width limited by TJ(MAX)
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-3P
TO-220
TO-3P
TO-220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
50
62.5
0.833
1.01
UNIT
°C/W
°C/W
2 of 5
QW-R502-916, A
UF640V
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
SYMBOL
TEST CONDITIONS
MIN
BVDSS
IDSS
IGSS
ID=250μA, VGS=0V
VDS = Rated BVDSS, VGS = 0V
VGS= ±20V
200
VGS(TH)
RDS(ON)
VGS=VDS, ID=250μA
ID=10A, VGS=10V
1.0
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
Gate Source Charge
QG(TOT)
QGS
Gate Drain Charge
QGD
TYP
0.14
VDD=100V,ID≈18A,
RG=9.1Ω,RL=5.4Ω,
MOSFET Switching Times are
Essentially Independent of
Operating Temperature
VGS=10V, ID≈18A, VDS=0.8 x Rated
BVDSS Gate Charge is Essentially
Independent of Operating
Temperature IG(REF) = 1.5mA
ISM
UNIT
25
±100
V
μA
nA
2.5
0.18
V
Ω
1275
400
100
VDS=25V, VGS=0V, f=1MHz
pF
pF
pF
13
50
46
21
77
68
ns
ns
ns
35
54
ns
43
8
64
nC
nC
22
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
VSD
TJ=25°C, IS=18A, VGS=0V,
Integral Reverse p-n Junction
Continuous Source Current
IS
Diode in the MOSFET
(body diode)
Drain
Pulse Source Current (body diode)
(Note)
MAX
Gate
nC
2.0
V
18
A
72
A
530
5.6
ns
μC
Sourse
Reverse Recovery Time
trr
TJ=25°C, IS=18A, dIS/dt=100A/μs
Reverse Recovery Charge
QRR
TJ=25°C, IS=18A, dIS/dt=100A/μs
Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
120
1.3
240
2.8
3 of 5
QW-R502-916, A
UF640V
„
Power MOSFET
TEST CIRCUIT
VDS
RL
10%
0
RG
VDD
VGS
90%
D.U.T.
90%
VGS
50%
10%
0
tD(ON)
tON
Fig.3 Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
PULSE WIDTH
50%
tD(OFF) tF
tOFF
Fig.4 Resistive Switching Waveforms
4 of 5
QW-R502-916, A
UF640V
„
Power MOSFET
TYPICAL CHARACTERISTICS
Saturation Characteristics
30
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
24
18
VGS=6V
Drain to Source On Resistance vs. Gate
Voltage And Drain Current
1.5
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
1.2
0.8
12
0.6
6
0.3
VGS=10V
0
0
3.0
4.0
1.0
2.0
5.0
Drain to Source Voltage, VDS (V)
0
0
45
60
15
30
Drain Current, ID (A)
75
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-916, A
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