Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST39; BST40
NPN high-voltage transistors
Product data sheet
Supersedes data of 2000 Jul 03
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BST39; BST40
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• High voltage (max. 350 V).
1
emitter
2
collector
3
base
APPLICATIONS
DESCRIPTION
• General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
2
3
MARKING
TYPE NUMBER
1
MARKING CODE
BST39
AT1
BST40
AT2
3
2
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST39
BST40
2004 Dec 14
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BST39; BST40
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
400
V
−
300
V
BST39
−
350
V
BST40
−
250
V
BST39
BST40
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
1.3
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-s)
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0 A; VCB = 300 V
−
20
nA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 5 V
−
100
nA
hFE
DC current gain
IC = 20 mA; VCE = 10 V
40
−
VCEsat
collector-emitter saturation voltage IC = 50 mA; IB = 4 mA
−
500
mV
Cc
collector capacitance
IE = ie = 0 A; VCB = 10 V; f = 1 MHz
−
2
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 70
−
MHz
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BST39; BST40
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 14
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
4
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BST39; BST40
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 14
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/05/pp6
Date of release: 2004 Dec 14
Document order number: 9397 750 13876
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