Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
Product data sheet
Supersedes data of 1999 Apr 28
2004 Dec 13
NXP Semiconductors
Product data sheet
BSR40; BSR41;
BSR42; BSR43
NPN medium power transistors
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Thick and thin-film circuits
• Telephony and general industrial applications.
DESCRIPTION
2
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR31 and BSR33.
3
MARKING
TYPE
NUMBER
3
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BSR40
AR1
BSR42
AR3
BSR41
AR2
BSR43
AR4
2
1
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
BSR40
BSR41
NAME
DESCRIPTION
VERSION
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
BSR42
BSR43
2004 Dec 13
2
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
70
V
−
90
V
BSR40; BSR41
−
60
V
BSR42; BSR43
−
80
V
BSR40; BSR41
BSR42; BSR43
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
0.2
A
Ptot
total power dissipation
−
1.35
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-s)
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 13
3
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0 A; VCB = 60 V
−
100
nA
IE = 0 A; VCB = 60 V; Tj = 150 °C
−
50
μA
−
100
nA
BSR40; BSR42
10
−
BSR41; BSR43
30
−
BSR40; BSR42
40
120
BSR41; BSR43
100
300
BSR40; BSR42
30
−
BSR41; BSR43
50
−
IC = 150 mA; IB = 15 mA; note 1
−
250
mV
IC = 500 mA; IB = 50 mA; note 1
−
500
mV
IC = 150 mA; IB = 15 mA; note 1
−
1
V
IC = 500 mA; IB = 50 mA; note 1
−
1.2
V
collector-base cut-off current
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 5 V
hFE
DC current gain
IC = 100 μA; VCE = 5 V; note 1
DC current gain
DC current gain
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
IC = 100 mA; VCE = 5 V; note 1
IC = 500 mA; VCE = 5 V; note 1
Cc
collector capacitance
IE = ie = 0 A; VCB = 10 V; f = 1 MHz
−
12
pF
Ce
emitter capacitance
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz
−
90
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
100
−
MHz
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
−
250
ns
−
1
μs
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
2004 Dec 13
4
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 13
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
5
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
BSR40; BSR41; BSR42;
BSR43
NPN medium power transistors
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 13
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Dec 13
Document order number: 9397 750 13874