DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMST2907A PNP switching transistor Product specification Supersedes data of 1999 Apr 22 2001 Nov 19 Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING • Low current (max. 600 mA) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Medium power switching • General purpose amplification. 3 handbook, halfpage DESCRIPTION 3 PNP switching transistor in an SC-70; SOT323 plastic package. NPN complement: PMST2222A. 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 1 ∗2F PMST2907A 2 Top view MAM048 Note Fig.1 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −60 V VCEO collector-emitter voltage open base − −60 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −600 mA ICM peak collector current − −800 mA IBM peak base current − −200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 19 2 Philips Semiconductors Product specification PNP switching transistor PMST2907A THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS UNIT IE = 0; VCB = −50 V − −10 nA − −10 µA − −50 nA IC = −0.1 mA 75 − IC = −1 mA 100 − emitter cut-off current IC = 0; VEB = −3 V hFE DC current gain VCE = −10 V VBEsat MAX. IE = 0; VCB = −50 V; Tj = 150 °C IEBO VCEsat MIN. IC = −10 mA; note 1 100 − IC = −150 mA; note 1 100 300 IC = −500 mA; note 1 50 − collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −400 mV IC = −500 mA; IB = −50 mA; note 1 − −1.6 V base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −1.3 V IC = −500 mA; IB = −50 mA; note 1 − −2.6 V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VEB = −2 V; f = 1 MHz − 30 pF fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz; note 1 200 − MHz − 45 ns Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA td delay time − 15 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 250 ns tf fall time − 50 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Nov 19 3 Philips Semiconductors Product specification PNP switching transistor PMST2907A VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = 3.5 V; VCC = −29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 2001 Nov 19 4 oscilloscope Philips Semiconductors Product specification PNP switching transistor PMST2907A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Nov 19 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP switching transistor PMST2907A DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 19 6 Philips Semiconductors Product specification PNP switching transistor PMST2907A NOTES 2001 Nov 19 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp8 Date of release: 2001 Nov 19 Document order number: 9397 750 09002