SSFM1022 Main Product Characteristics:
VDSS
100V
RDS(on)
19mohm
ID
40A
SSFT3906
SSFM1022
TO220 Features and Benefits:
Marking and pin
Schematic diagram Assignment Advanced trench MOSFET process technology
Special designed for PWM, load switching and general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
40
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
36
IDM
Pulsed Drain Current②
160
ISM
Pulsed Source Current (Body Diode)②
160
PD @TC = 25°C
Power Dissipation③
3.2
W
PD @TC =100°C
Power Dissipation③
2
W
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 25
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
42
mJ
IAR
Avalanche Current @ L=0.1mH②
29
A
-55 to + 175
°C
TJ TSTG
Operating Junction and
Storage Temperature
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
16
℃/W
Junction-to-ambient (t ≤ 10s) ④
32
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
60
℃/W
RθJA
©Silikron Semiconductor CO.,LTD.
2010.12.14
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SSFM1022 Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source breakdown
Min.
voltage
RDS(on)
IDSS
Max
Units
—
—
V
—
19
22
mΩ
2
—
4
V
—
—
10
100
Static Drain-to-Source
on-resistance
VGS(th)
Typ.
Gate threshold voltage
Drain-to-Source leakage current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 8A
VDS = VGS,
ID = 250μA
VDS = 100V,
VGS = 0V
μA
—
Conditions
VDS = 100V,
VGS = 0V,
50
TJ = 55°C
IGSS
Gate-to-Source forward leakage
— — 100
Gate-to-Source reverse leakage
-100
— —
Qg
Total gate charge
— 26.4
35
Qgs
Gate-to-Source charge
— 9.18
15 Qgd
Gate-to-Drain("Miller") charge
— 6.91
10 Qg(th)
Gate charge at shreshold
—
5.78
8
Vplateau
gate plateau voltage
—
5.48
8
td(on)
Turn-on delay time
— 10.6
— tr
Rise time
— 3.8
— td(off)
Turn-Off delay time
— 16
— tf
Fall time
— 6
— Ciss
Input capacitance
— 1596
— Coss
Output capacitance
— 249
— Crss
Reverse transfer capacitance
— 77
— Rg
Gate resistance
—
—
6
nA
nC
VGS =25V
VGS = -25V
VGS=10V,
VDS=50V,
ID=8A
V
VGS=10V,
ns
VDS=50V,
RL=6Ω,
RGEN=3Ω
VGS=0V,
pF
VDS=50V,
f=1MHz
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Min.
Typ.
Maximum Body-Diode
Continuous Current
Max
Uni
ts
40
A
VSD
Diode Forward Voltage
—
0.65
1
V
trr
Reverse Recovery Time
—
32
—
ns
Qrr
Reverse Recovery Charge
—
48
—
nC
ton
Forward Turn-on Time
Conditions
IS=1A, VGS=0V
IF=8A, dI/dt=100A/μs
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
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SSFM1022 Typical
60
60
10V
8V
40
6.5V
30
20
6V
10
50
ID,drain to source current(A)
7V
50
I D , d r a i n c u r r e n t ( A)
electrical and thermal characteristics
VDS=VGS
40
30
20
125℃
10
25℃
0
0
0
1
2
3
4
5
0
1
VDS,drain to source voltage(V)
2
3
4
5
6
7
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics Figure 2: Typical Transfer Characteristics Rdson,Drain-to-Source On Resistance(Normalized)
27
Rdson,Drain-to-Source On
Resistance(Normalized)
26
VGS=7V
25
24
23
VGS=10V
22
21
0
5
10
15
20
25
2.1
2
1.9
1.8
1.7
VGS=10V
1.6
ID=8A
1.5
1.4
VGS=7V
1.3
1.2
ID=6.5A
1.1
1
0.9
0.8
0
30
25
125
150
Temperature
1.E+02
45
ID=8A
IS,source to drain current(A)
Rdson,Drain-to-Source On Resistance(Normaliz ed)
100
Figure 4: On-Resistance vs. Junction
Gate Voltage
40
125℃
35
30
25℃
25
20
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
15
6
7
8
9
10
Figure 5: On-Resistance vs. Gate-Source Voltage
©Silikron Semiconductor CO.,LTD.
0
0.2
0.4
0.6
0.8
1
VSD,source to drain voltage(V)
VGS,gate to source voltage(V)
75
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
50
Tj,Junction Temperature(°C)
Figure 6: Body-Diode Characteristics
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1.2
SSFM1022 electrical and thermal characteristics
10
2500
8
2000
Capacitance (pF)
VGS,gate to source voltage(V)
Typical
6
VDS=50V
4
ID=8A
Ciss
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
Coss=Cds+Cgd
Crss=Cgd
2
500
Coss
Crss
0
0
5
10
15
20
25
0
30
0
10
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
10000
100
Power ( W)
10
100uS
1mS
1
Tj(max)=150℃
0.1
10mS
Tc=25℃
0.01
0.01
0.1
DC
1
10
Tj(max)=150℃
1000
10uS
Ron limited
Ta=25℃
100
10
10S
100
1000
1
0.00001 0.0001 0.001 0.01
0.1
1
10
100
1000
VDS,drain to source voltage(V)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating
ZθJC,Transient Thermal
Resistance( Normalized )
Operating Area(⑤)
50
40
8: Capacitance Characteristics
1000
ID,drain current(A)
20
30
VDS, drain to source voltage(V)
10
Junction-to-Ambient (⑤)
Duty cycle D= 0.5,0.3,0.1,0.05,0.01,single
1
Duty cycle D=T1/T,
0.1
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=16℃/W
0.01
0.000001 0.00001 0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (⑤)
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SSFM1022 ZθJA,Transient Thermal
Resistance( Normalized )
1
0.1
Duty cycle D=T1/T,
TJ（max）＝PDM*ZθJA*RθJA+TA
0.01
RθJA=60℃/W
Duty cycle
D=0.5,0.3,0.1,
0.05,0.01,single
0.001
0.00001 0.0001 0.001
0.01
0.1
1
Pulse Width (s)
10
100
1000
Figure 12: Normalized Maximum Transient Thermal Impedance (⑥)
©Silikron Semiconductor CO.,LTD.
2010.12.14
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SSFM1022 Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using
junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured
with the device mounted to a large heatsink, assuming a maximum junction
temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2010.12.14
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SSFM1022 Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
50
10
©Silikron Semiconductor CO.,LTD.
70
30
90
50
0.141
0.107
-
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
50
10
70
30
Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
-
2010.12.14
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0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
90
50
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SSFM1022 Ordering and Marking Information
Device Marking: SSFM1022
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
TO220
Units/ Tubes/
Tube Inner Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
1000
Inner Boxes/
Carton Box
Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃
168 hours
@ 100% of Max VGSS 500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃
@ 80% of Max
VDSS/VCES/VR
Units/
Carton Box
6
Duration
©Silikron Semiconductor CO.,LTD.
Units/
Inner Box
2010.12.14
Version : 1.0 preliminary page
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8of9
SSFM1022 ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can
handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your Silikron representative nearest you
before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all Silikron products described or
contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and
are not guarantees of the performance, characteristics, and functions of the described products as
mounted in the customer’s products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However,
any and all semiconductor products fail with some probability. It is possible that these probabilistic
failures could give rise to accidents or events that could endanger human lives, that could give rise to
smoke or fire, or that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
In the event that any or all Silikron products(including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. Silikron believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery
Specification" for the Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject
to change without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
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2010.12.14
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