Datasheet

SSF3314E
DESCRIPTION
The SSF3314E uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID = 8A
RDS(ON) < 39mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4.0V
RDS(ON) < 23mΩ @ VGS=4.5V
RDS(ON) < 18mΩ @ VGS=10V
Pin Assignment
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
DFN3×3-8L BOTTOM VIEW
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF3314E
SSF3314E
DFN3×3-8L
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
ID
8
A
IDM
45
A
PD
1.7
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
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SSF3314E
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
IGSS
VGS=±10V,VDS=0V
10
BVGSO
VDS=0V, IG=±250uA
±12
VGS(th)
VDS=VGS,ID=250μA
0.6
uA
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
1
1.5
V
VGS=10V, ID=8A
14
18
VGS=4.5V, ID=6A
17
23
VGS=4.0V, ID=4A
18
24
VGS=3.1V, ID=4A
20
28
VGS=2.5V, ID=3A
23
39
VDS=5V,ID=8A
17
S
870
PF
130
PF
100
PF
1.5
Ω
4
nS
10
nS
28
nS
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
VDS=15V,VGS=0V,
F=1.0MHz
VDS=0V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
VDD=15V,VGS=10V,
RGEN=3Ω,RL=1.25Ω
td(off)
Turn-Off Fall Time
tf
7
nS
Total Gate Charge
Qg
10.5
nC
Gate-Source Charge
Qgs
1.9
nC
Gate-Drain Charge
Qgd
4.1
nC
VDS=15V,ID=8A,VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1A
0.76
0.9
V
4.5
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3314E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
toff
tf
td(off)
90%
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Normalized Effective
Transient Thermal Impedance
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF3314E
DFN3×3-8L PACKAGE INFORMATION
BOTTOM VIEW
TOP VIEW
COMMON DIMENSIONS(MM)
SIDE VIEW
PKG.
REF.
A
A1
A3
D
E
b
L
D2
E2
e
W: VERY VERY THIN
MIN.
NOM.
MAX.
0.70
0.75
0.80
0.00
-
0.05
0.2REF.
2.95
3.00
3.05
2.95
3.00
3.05
0.25
0.30
0.35
0.30
0.40
0.50
2.30
2.45
2.55
2.50
1.65
1.75
0.65BSC
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF3314E
ATTENTION:
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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