Data Sheet

1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
Rev. 04 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic
packages.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
1PS66SB82
SOT666
-
triple isolated diode
1PS88SB82
SOT363
SC-88
triple isolated diode
1.2 Features
„ Low diode capacitance
„ Low forward voltage
„ Very small SMD plastic packages
1.3 Applications
„ Digital applications:
‹ Ultra high-speed switching
‹ Clamping circuits
„ RF applications:
‹ Diode ring mixer
‹ RF detector
‹ RF voltage doubler
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
IF
continuous forward current
VR
continuous reverse voltage
Cd
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz;
see Figure 4
Min
Typ
Max
Unit
-
-
30
mA
-
-
15
V
-
1
-
pF
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
Simplified outline
6
1
5
Symbol
4
2
6
5
1
2
4
3
sym046
3
001aab555
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
1PS66SB82
-
plastic surface mounted package; 6 leads
SOT666
1PS88SB82
SC-88
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code
1PS66SB82
N5
1PS88SB82
E1*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Max
Unit
VR
continuous reverse voltage
-
15
V
IF
continuous forward current
-
30
mA
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
−65
+125
°C
Tstg
storage temperature
−65
+150
°C
1PS66SB82_1PS88SB82_4
Product data sheet
Min
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
2 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
SOT666
[2][3]
-
-
700
K/W
SOT363
[3][4]
-
-
416
K/W
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Refer to SOT666 standard mounting conditions.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Refer to SOT363 (SC-88) standard mounting conditions.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
VF
Parameter
Conditions
forward voltage
see Figure 1
Typ
Max
Unit
IF = 1 mA
-
-
340
mV
IF = 30 mA
-
-
700
mV
IR
reverse current
VR = 1 V; see Figure 2
-
-
0.2
μA
rdif
differential
resistance
IF = 5 mA; f = 1 kHz;
see Figure 3
-
12
-
Ω
Cd
diode
capacitance
VR = 0 V; f = 1 MHz;
see Figure 4
-
1
-
pF
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1PS66SB82_1PS88SB82_4
Product data sheet
Min
[1]
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
3 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
mld549
103
mld550
103
IR
(μA)
IF
(mA)
102
(1)
(2)
(3)
(1)
102
10
(2)
1
10
(3)
10−1
(2)
(1)
1
0
(3)
10−2
0.4
0.8
1.2
VF (V)
1.6
0
(1) Tamb = 125 °C
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
mgt838
103
r dif
(Ω)
Fig 2.
10
5
VR (V)
15
Reverse current as a function of reverse
voltage; typical values
mld551
1.2
Cd
(pF)
1
102
0.8
0.6
10
0.4
1
10−1
1
10
IF (mA)
0
102
0
6
8
10
f = 1 MHz; Tamb = 25 °C
Differential diode forward resistance as a
function of forward current; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
1PS66SB82_1PS88SB82_4
Product data sheet
4
VR (V)
f = 1 kHz; Tamb = 25 °C
Fig 3.
2
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
4 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
8. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 5.
EUROPEAN
PROJECTION
Package outline SOT666
1PS66SB82_1PS88SB82_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
5 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
c
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
Fig 6.
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Package outline SOT363 (SC-88)
1PS66SB82_1PS88SB82_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
6 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
9. Packing information
Table 9.
Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3 000
4000
10 000
1PS66SB82
SOT666
4 mm pitch, 8 mm tape and reel
-
-115
-
1PS88SB82
SOT363
4 mm pitch, 8 mm tape and reel
-115
-
-135
[1]
For further information and the availability of packing methods see Section 12.
1PS66SB82_1PS88SB82_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
7 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
10. Revision history
Table 10.
Revision history
Document ID
Release date
1PS66SB82_1PS88SB82_4 20100113
Modifications:
Data sheet status
Change notice
Supersedes
Product data sheet
-
1PS66SB82_1PS88SB82_3
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
Table 3 “Pinning”: updated
Figure 5 “Package outline SOT666”: updated
Figure 6 “Package outline SOT363 (SC-88)”: updated
1PS66SB82_1PS88SB82_3 20050124
Product data sheet
-
1PS88SB82_2
1PS88SB82_2
20030411
Product specification
-
1PS88SB82_1
1PS88SB82_1
20010216
Product specification
-
-
1PS66SB82_1PS88SB82_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
8 of 10
1PS66SB82; 1PS88SB82
NXP Semiconductors
15 V, 30 mA low Cd Schottky barrier diodes
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
1PS66SB82_1PS88SB82_4
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 04 — 13 January 2010
9 of 10
NXP Semiconductors
1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 January 2010
Document identifier: 1PS66SB82_1PS88SB82_4
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