Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D087
BAT160 series
Schottky barrier double diodes
Product data sheet
Supersedes data of 1999 Mar 26
1999 Sep 20
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
FEATURES
BAT160 series
PINNING
• Low switching losses
BAT160
PIN
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
4
A
C
S
1
k1
a1
a1
2
n.c.
n.c.
n.c.
3
k2
a2
k2
4
a1, a2
k1, k2
k1, a2
1
2 n.c.
Fig.2
APPLICATIONS
3
MGL171
BAT160A diode
configuration (symbol).
• Low power switched-mode power
supplies
• Rectification
4
page
4
• Polarity protection.
1
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
2 n.c.
Fig.3
1
TYPE NUMBER
2
Top view
MARKING
3
AT160A
BAT160C
AT160C
BAT160S
AT160S
BAT160C diode
configuration (symbol).
4
Fig.1
Simplified outline
(SOT223) and pin
configuration.
1
3
2 n.c.
Fig.4
1999 Sep 20
MGL172
MSB002 - 1
MARKING
CODE
BAT160A
3
2
MGL173
BAT160S diode
configuration (symbol).
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
60
V
−
1
A
−
10
A
−
0.5
A
storage temperature
−65
+150
°C
junction temperature
−
150
°C
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current
tp = 8.3 ms; half sinewave;
JEDEC method
IRSM
non-repetitive peak reverse current
tp = 100 μs
Tstg
Tj
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
Cd
forward voltage
reverse current
diode capacitance
see Fig.5
IF = 100 mA
400
mV
IF = 1 A
650
mV
IF = 2 A
850
mV
VR = 60 V; note 1; see Fig.6
350
μA
VR = 60 V; Tj = 100 °C; note 1;
see Fig.6
8
mA
f = 1 MHz; VR = 4 V; see Fig 7
60
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT223 standard mounting conditions.
1999 Sep 20
3
VALUE
UNIT
100
K/W
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT160 series
GRAPHICAL DATA
MCD784
104
handbook, halfpage
MCD768
105
handbook, halfpage
IR
IF
(mA)
(μA)
104
103
(1)
103
(2)
(3)
102
102
(2)
(1)
10
10
(3)
(4)
(4)
1
1
10−1
0
0.2
0.4
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.5
0.6
VF (V)
0.8
0
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
Fig.6
MCD766
103
handbook, halfpage
Cd
(pF)
102
10
0
20
40
VR (V)
60
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
1999 Sep 20
20
4
40
VR (V)
60
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT160 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1999 Sep 20
REFERENCES
IEC
JEDEC
EIAJ
SC-73
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT160 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Sep 20
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/03/pp7
Date of release: 1999 Sep 20
Document order number: 9397 750 06097
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