PHT2NQ10T N-channel TrenchMOS transistor M3D087 Rev. 01 — 16 October 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT2NQ10T in SOT223 2. Features ■ TrenchMOS™ technology ■ Fast switching ■ Surface mount package. 3. Applications ■ Primary side switch in DC to DC converters ■ High speed driver ■ Fast, general purpose switch. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) 4 drain (d) Simplified outline Symbol d 4 g 1 Top view 2 3 MSB002 - 1 SOT223 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. MBB076 s PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − 100 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V − 2.5 A Ptot total power dissipation Tsp = 25 °C − 6.25 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance 315 430 mΩ Conditions Min Max Unit 100 V VGS = 10 V; ID = 1.75 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) 25°C ≤ to ≤ 150 °C − VDGR drain-gate voltage (DC) 25°C ≤ to ≤ 150 °C; RGS = 20 kΩ − 100 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 − 2.5 A Tsp = 100 °C; VGS = 10 V; − 1.6 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 10 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 6.25 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C − 2.5 A ISM peak source (diode forward) current Tsp = 25 °C; tp ≤ 10 µs − 10 A Avalanche ruggedness EAS non-repetitive avalanche energy unclamped inductive load; ID =2.5 A; tp = 0.2 ms; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C; Figure 4 − 32 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; Figure 4 − 2.5 A © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 2 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 03aa17 03aa25 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 0 50 100 150 o 0 200 50 100 150 o 200 Tsp ( C) Tsp ( C) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03ag27 102 03ag34 10 ID (A) RDSon = VDS/ ID IAS 10 tp = 10 µs (A) 100 µs 25 ºC 1 1 1 ms 10-1 DC 10 ms 100 ms Tj prior to avalanche = 125 ºC 10-1 10-2 1 10 102 10-2 103 Tsp = 25 °C; IDM is single pulse. 1 10 Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C and 125 °C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data 10-1 tp (ms) VDS (V) Rev. 01 — 16 October 2001 3 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 5 20 K/W Rth(j-a) thermal resistance from junction to ambient 150 K/W mounted on a printed-circuit board; minimum footprint 7.1 Transient thermal impedance 03ag26 102 Zth(j-sp) (K/W) δ = 0.5 10 0.2 0.1 0.05 1 δ= P tp T 0.02 t tp single pulse T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Tsp = 25 °C Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 4 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 100 120 − V Tj = −55 °C 89 − − V 2 3 4 V Tj = 150 °C 1.2 − − V Tj = −55 °C − − 6 V − 1 25 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 10 Tj = 25 °C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 °C Tj = 150 °C − 4 250 µA − 10 100 nA Tj = 25 °C − 315 430 mΩ Tj = 150 °C − 725 990 mΩ IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 1.75 A; Figure 8 and 9 Dynamic characteristics gfs forward transconductance VDS = 5 V; ID = 2.5 A − 3 − S Qg(tot) total gate charge ID = 2.5 A; VDD = 80 V; VGS = 10 V; Figure 14 − 5.1 − nC Qgs gate-source charge − 1 − nC Qgd gate-drain (Miller) charge − 2.1 − nC Ciss input capacitance − 160 − pF Coss output capacitance − 29 − pF Crss reverse transfer capacitance − 18 − pF td(on) turn-on delay time − 4.5 − ns tr rise time − 7.7 − ns td(off) turn-off delay time − 7.8 − ns tf fall time − 2.5 − ns − 0.9 1.5 V − 45 − ns − 90 − nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 50 V; RD = 27 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 2.5 A; VGS = 0 V; Figure 13 trr reverse recovery time Qr recovered charge IS = 2.5 A; dIS/dt = −100 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 5 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 03ag28 03ag30 6 10 ID VGS = 10V Tj = 25ºC VDS > ID X RDSon ID (A) 8 7V (A) 6.5 V 4 6 6V 4 2 5.5 V 150ºC 2 5V Tj = 25ºC 4.5 V 0 0 0 1 2 3 4 VDS (V) 0 5 Tj = 25 °C 4 6 VGS (V) 8 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa29 03ag29 3 0.6 Tj = 25ºC RDSon 2 VGS = 6V 6.5 V 7V 10 V a (Ω) 0.5 2.5 2 0.4 1.5 0.3 1 0.2 0.5 0.1 0 0 2 4 6 8 ID (A) 10 -60 Tj = 25 °C 0 60 120 o 180 Tj ( C) R DSon a = --------------------------R ° DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 6 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 10-1 ID (A) 10-2 03aa32 5 VGS(th) (V) 4 max 3 typ 2 min 0 10-6 60 typ max 10-4 10-5 0 min 10-3 1 -60 03aa35 120 o Tj ( C) 0 1 180 2 3 5 4 VGS (V) Tj = 25 °C; VDS = 10 V ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03ag32 103 C (pF) Ciss 102 Coss Crss 10 10-1 1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 7 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 03ag31 03ag33 6 15 VGS = 0 V IS (A) VGS ID = 2.5 A (V) 12 Tj = 25ºC 4 9 VDD = 20 V VDD = 80 V 6 2 3 Tj = 25ºC 150ºC 0 0 0 0.4 0.8 VSD (V) 1.2 0 Tj = 25 °C and 150 °C; VGS = 0 V 4 6 QG (nC) 8 ID = 2.5 A; VDD = 80 V, 20V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data 2 Rev. 01 — 16 October 2001 8 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 15. SOT223. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 9 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 10. Revision history Table 6: Revision history Rev Date 01 20001016 CPCN Description - Product specification; initial version © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Product data Rev. 01 — 16 October 2001 10 of 12 PHT2NQ10T Philips Semiconductors N-channel TrenchMOS transistor 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08918 Rev. 01 — 16 October 2001 11 of 12 Philips Semiconductors PHT2NQ10T N-channel TrenchMOS transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 October 2001 Document order number: 9397 750 08918