CoolMOS™ Cross Reference 600/650V C6/E6 Replacements for C3

CoolMOS™ New Generation 600V & 650 V C6/E6 replacements for C3
CoolMOS™ 600V C6/E6 replacements for C3
TO-252 DPAK
TO-263 D2PAK
TO-220
TO-220 FullPAK
TO-262 I2PAK
TO-247
RDS(on)
C3
Original
C6/E6
Replacement
3.3 Ω
SPD02N60C3 IPD60R3k3C6
1.4 Ω
SPD03N60C3 IPD60R1k4C6
C3
Original
C6
Replacement
C3
Original
SPP03N60C3
C6/E6
Replacement
C3
Original
C6 /E6
Replacement
C3
Original
C6
Replacement
C3
Original
C6/E6
Replacement
IPP60R1k4C6
0.95 Ω
SPD04N60C3 IPD60R950C6 SPB03N60C3 IPB60R950C6 SPP04N60C3
IPP60R950C6 SPA04N60C3
IPA60R950C6
0.60 Ω
SPD07N60C3 IPD60R600E6 SPB07N60C3 IPB60R600C6 SPP07N60C3
IPP60R600E6 SPA07N60C3
IPA60R600E6
0.38 Ω
SPD11N60C3 IPD60R380C6 SPB11N60C3 IPB60R380C6 SPP11N60C3
IPP60R380E6 SPA11N60C3
IPA60R380E6 SPI11N60C3
IPI60R380C6
0.28 Ω
SPB15N60C3 IPB60R280C6 SPP15N60C3
IPP60R280E6 SPA15N60C3
IPA60R280E6 SPI15N60C3
IPI60R280C6
SPW15N60C3 IPW60R280E6
0.19 Ω
SPB20N60C3 IPB60R190C6 SPP20N60C3
IPP60R190E6 SPA20N60C3
IPA60R190E6 SPI20N60C3
IPI60R190C6
SPW20N60C3 IPW60R190E6
0.16 Ω
SPB24N60C3 IPB60R160C6 SPP24N60C3
IPP60R160C6 SPA24N60C3
IPA60R160C6
SPW24N60C3 IPW60R160C6
0.10 Ω
SPW35N60C3 IPW60R099C6
0.07 Ω
SPW47N60C3 IPW60R070C6
CoolMOS™ 650V C6/E6 replacements for C3
TO-220
TO-220 FullPAK
TO-262 I2PAK
TO-247
RDS(on)
C3 Original
E6 Replacement
C3 Original
E6 Replacement
C3 Original
C6 Replacement
0.60 Ω
SPP07N65C3
IPP65R600E6
SPA07N65C3
IPA65R600E6
SPI07N65C3
IPI65R600C6
0.38 Ω
SPP11N65C3
IPP65R380E6
SPA11N65C3
IPA65R380E6
SPI11N65C3
IPI65R380C6
0.28 Ω
SPP15N65C3
IPP65R280E6
SPA15N65C3
IPA65R280E6
SPI15N65C3
IPI65R280C6
0.19 Ω
SPP20N65C3
IPP65R190E6
SPA20N65C3
IPA65R190E6
SPI20N65C3
IPI65R190C6
0.07 Ω
1)
C3 Original
C6 Replacement
SPW20N65C3
IPW65R190C6
SPW47N65C3
IPW65R070C6 1)
Available Q4 2011
Order Number: B152-H9581-G1-X-7600-DB2011-0011
Date: 10/2011
All rights reserved. © 2011 Infineon Technologies AG
C6/E6 technology
What is the Difference between the CoolMOS™ C6 & E6 series?
The C6 and E6 are exactly the same
technology, but with a different integrated
resistor value. Please see charts for details.
600V C6 Series
600V E6 Series
16
14
12
Rg int [Ω]
The C6 series was first launched and
optimized for ease of use, however for
certain Discontinuous Conduction Mode
(DCM) applications it was realized that
increasing pressures on efficiency required
an improvement. By carefully reducing the
integrated gate resistor value will improve
efficiency in these applications.
600V C6 & E6 integrated Gate Resistor
18
10
8
6
4
2
0
41
The E6 only covers a smaller range of parts
as its specifically targeted for the above
application, where there is no E6 range the C6
has already been fully optimized in terms of
ease of use and efficiency.
70
99
125
160
190
280
380
450
520
600
750
950
1k4
2k0
RDS(on) [mΩ]
650V C6 & E6 integrated Gate Resistor
18
16
650V C6 Series
650V E6 Series
14
Rg int [Ω]
12
10
8
6
4
2
0
37
70
99
190
RDS(on) [mΩ]
280
380
600
3k3
What is the Difference between the CoolMOS™ C3 & C6/E6 series?
CoolMOS™ C6/E6 series was designed as a
direct replacement for the well established
C3 series of CoolMOS™. The series are both
designed as a general easy to use part, but
improvements have also been made for the
C6/E6 on the earlier C3 series.
Drain
Drain
C6 / E6
C3
Rg int
Gate
Gate
So what are the differences:
„„
Better light load efficiency due to:
–– Lower Gate Charge value (Qg) (see table for example)
–– Energy stored in the output capacitance, as this
Source
parameter, is decisive for the efficiency in high line
or light load conditions Eoss (see table for example)
„„
Improved body diode control for use in hard
commutation applications (i.e resonant
topologies)
„„
Ease of driving the MOSFET by use of an
Specification
On-state resistance: maximum rating, 25 °C
Total Gate charge
Energy stored in output: capacitance @ 400V
integrated gate resistor
„„
More attractive price points
Body diode, reverse recovery charge
Body diode, di/dt
Ease of Use with integrated gate resistor:
„„
Symbol
IPW60R190C6
SPW20N60C3
RDS(on)
190 mΩ
190 mΩ
Qg
58 nC
87 nC
improves low load efficiency
EOSS
5 µJ
10 µJ
Improves efficiency in hard
switching applications
Qrr
7 µC
11 µC
dIf /dt
1400 A/µs
500 A/µs
Disassembling a MOSFET package parasitics – TO-220
Helps self limiting di/dt and dv/dt behavior,
-
Improved body diode for soft
switching applications
Parasitic L C influence: Damping effect of Rg int
Lead inductance
y
Reduces parasitic effects due to package and
board layout. (see picture)
dv/dt triggered
oscillations
Drain
Resonant circuit
External on-board
coupling capacitance
–– By adding in an integrated gate resistor this helps
Cgd ext
Cgd
damp out resonant effects due to inherent package
construction or board layout. This is more effective
Benefits
z
beneficial in EMI and voltage overshoot.
„„
Source
Gate: 16.1nH
Gate
than an external gate resistor due to its positioning
Rg ext
Lead + gate wire
inductance
Rg int
Cds
Cgs
closer to the gate.
Resonant circuit
Source
Drain: 13nH
Source: 14.9nH
x
di/dt triggered
oscillations
C3 vs. E6 efficiency comparison in a CCM-PFC stage
190mΩ @ 130kHz
Gate Charge and Integrated Gate Resistor
Due to low gate charge plus integrated gate resistors the gate
current is relatively low; hence the use of low cost gate drivers is
therefore possible.
IPP60R190E6 7.5R
SPP20N60C3 7.5R
97
95
93
0
50
100
150
200
250
300
350
400
Pout [W]
Significant light load
190mΩ Efficiency @ 230Vac and 7.5Ω Gate resistor @ 130kHz
97
efficiency improvement
C6 / E6
96
94
In combination with a relatively low total gate charge the
losses dissipated in the driver are considerably lower as well.
We recommand to use very small external gate resistors to achieve
optimum efficiency across a wide range of load conditions.
Drain
190mΩ Efficiency @ 115Vac and 7.5Ω Gate resistor @ 130kHz
98
efficiency [%]
CoolMOS™ C6 comes with an integrated gate resistor in
order to achieve self-limiting di/dt and dv/dt characteristics.
This integrated Rg allows fast turn on and turn off at normal
operating current conditions but limits the di/dt and dv/dt in
case of peak current conditions. This helps to improve performance
in hard commutation applications (i.e. resonant topologies).
with E6 can then also be
IPP60R190E6 7.5R
SPP20N60C3 7.5R
96
achieved compared to C3
Rg ext
95
due to the improved Qg
Rg int
and Eoss values; as seen
in example device table.
Source
Carefully choosing Rg ext with Rg int
will give best efficiency
For further information please visit our website: www.infineon.com/c6e6
efficiency [%]
Gate
94
93
92
91
90
0
50
100
150
200
Pout [W]
250
300
350
400
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