MA111 Zener Diodes Composite Elements MA3062W Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 0.65±0.15 1 0.5 0.95 2 3 +0.1 0.16 –0.06 +0.2 0.1 to 0.3 Rating Unit 100 mA Single IF(AV) Double IF(AV) 75 mA Single IFRM 200 mA Double IFRM 150 mA Single Ptot*1 200 mW Double Ptot*1 150 mW Non-repetitive reverse surge power dissipation PZSM*2 15 W Junction temperature Tj 125 ˚C Storage temperature Tstg – 55 to + 125 ˚C Average forward current Instanious forward current Total power dissipation 0 to 0.1 Symbol Parameter 0.8 1.1 –0.1 ■ Absolute Maximum Ratings (Ta= 25˚C) 0.6 –0 0.2 +0.1 +0.1 0.4 –0.05 +0.2 wiring in parallel of MA3062 4 0.95 2.9 –0.05 1.9±0.2 type package (4-pin) ● Two-element 1.5 –0.05 0.5R ■ Features ● Mini +0.25 0.65±0.15 0.4±0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) ■ Internal Connection 4 1 3 2 *1 With a printed-circuit board *2 t=100µ s, Tj=150˚C 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Condition Symbol Forward voltage VF IF=10mA Zener voltage VZ*2 IZ = 5mA Operating resistance RZ IZ = 5mA Reverse current IR VR= 4V Temperature coefficient of zener voltage SZ*3 IZ = 5mA Terminal capacitance CD VR= 0V, f=1MHz min 5.8 6.2W max 0.8 0.9 6.2 6.6 V 6 20 Ω 2.3 3.7 mV/˚C 90 130 pF 3 0.4 Note 1. Rated input/output frequency : 5MHz 2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 125˚C ■ Marking typ Unit V µA